© 2012 г. Mehdi Dehghan
Department of Electrical Engineering, Firoozabad Branch, Meymand Center, Islamic Azad University,
Meymand, Iran
E-mail: m_dehghan592@yahoo.com
In this paper the mean current impulse response and standard deviation in Geiger
mode for heterostructure APD are determined. The model is based on recurrence
equations. These equations are solved numerically to calculate the mean current impulse
response and standard deviation as a function of time. In this structure we illustrate
the multiplication region with different ionization threshold energies that the impact
ionization of the injected carrier type is localized and the feedback carrier type is
suppressed. In fact for this structure, better control of spatial distribution of impact
ionization for both injected and feedback carriers can be achieved. By enhancing the
control of impact-ionization position, the structure achieved to high gain and very low
noise.
Keywords: Avalanche Photodiode, Geiger mode, I2E structure, Dark Count.
Сodes OCIS: 040.1345.
УДК 621.383
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