УДК: 535.33; 548.0
Luminescence of broad-band compounds of elements of groups II–VI with a tin impurity
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Махний В.П., Бойко Ю.Н., Протопопов Е.В. Люминесценция широкозонных соединений элементов II–VI групп с примесью олова // Оптический журнал. 2012. Т. 79. № 2. С. 89–95.
Makhniy V. P., Boyko Yu. N., Protopopov E. V. Luminescence of broad-band compounds of elements of groups II–VI with a tin impurity // Opticheskii Zhurnal. 2012. V. 79. № 2. P. 89–95.
This paper discusses the luminescence properties of films of cadmium and zinc chalcogenides obtained by the diffusion of tin from the vapor phase in a closed volume. It is established that the doping of ZnSe, CdS, and CdSe substrates increases the efficiency of the edge emission, while that of ZnTe causes it to disappear and causes a new band to appear in the energy region 1.8–2.1 eV. The absence of luminescence of CdTe : Sn films in the 0.6–1.6-eV range is explained by band corrugation.
diffusion, amphoteric impurity, luminescence, excitons, donor-acceptor pair
OCIS codes: 310.0310, 310.1210, 310.6860
References:2. V. I. Fistul’, Dopant Atoms in Semiconductors (Fiz.-Mat. Lit, Moscow, 2004).
3. D. D. Nedeoglo and A. V. Simashkevich, Electrical and Luminescence Properties of Zinc Selenide (Shtiintsa, Kishinev, 1984).
4. Ya. V. Tkachenko, “Mekhanizmi defektoutvorennya ta lyuminestsentsii u bezdomishkovikh i legovanikh telurom kristalakh selenidu tsinku,” Dissertation for Candidate of Physicomathematical Sciences [in Ukrainian] (2005).
5. V. I. Gryvul, V. P. Makhniy, and I. V. Tkachenko, “Defect formation in diffusive layers of ZnSe:Sn and ZnSe:Mg,” Funct. Mater. 14, No. 3, 48 (2007).
6. V. I. Grivul, V. P. Makhni˘ı, and M. M. Sletov, “The origin of edge luminescence in diffusion ZnSe:Sn layers,” Fiz. Tekh. Poluprovodn. 47, 806 (2007). [Semiconductors 47, 784 (2007)].
7. K. Era and D. W. Langer, “Luminescence of ZnSe near the band edge under strong laser light excitation,” J. Lumin. 1–2, 514 (1970).
8. V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors: A Handbook (Naukova Dumka, Kiev, 1987).
9. S. A. Medvedev, ed., Physics and Chemistry of II–VI Compounds (Mir, Moscow, 1970).
10. V. P. Makhni˘ı and V. I. Grivul, “Diffusion ZnTe:Sn layers with n-type conductivity,” Fiz. Tekh. Poluprovodn. 40, 794 (2006). [Semiconductors 40, 774 (2006)].
11. V. V. Seredyuk and Yu. F. Vaksman, The Luminescence of Semiconductors (Vishcha Shkola, Kiev–Odessa, 1988).
12. D. V. Korbutyak, S. V. Mel’nichuk, E. V. Korbut, and M. M. Borisyuk, Telurid kadmiyu: domishkovo-defektni stani ta detektorni vlastivosti (Yavan Fedorov, Kiev, 2000). [in Ukrainian].
13. V. P. Makhni˘ı, “Semiinsulating layers of cadmium telluride,” Zh. Tekh. Fiz. 75, No. 11, 122 (2005). [Tech. Phys. 50, 1513 (2005)].
14. V. I. Fistul’, Strongly Doped Semiconductors (Nauka, Moscow, 1967).
15. V. P. Makhniy, M. M. Slyotov, and N. V. Skrypnyk, “Peculiar optical properties of modified surface of monocrystalline cadmium telluride,” Ukr. J. Phys. Opt. 10, No. 1, 54 (2009).