ru
Back
УДК: 621.38
New method of forming a lithographic mask or relief directly during electron-beam exposure of a resist
Full text «Opticheskii Zhurnal»
Full text on elibrary.ru
Publication in Journal of Optical Technology
This paper proposes a new, “dry” method of forming a mask or any other relief pattern in certain positive resists by directly etching the resist immediately during exposure by electron beam. The method is very efficient when forming spatial 3D structures and can apparently be successfully used in optoelectronics.
optoelectronics, electronic lithography, dry etching resist, 3d structure
References:1. M. A. Bruk, M. V. Kondrat’eva, A. A. Baranov, K. V. Pebalk, A. M. Sergeev, and N. V. Kozlova, “Radiation depolarization of PMMA adsorbed on silochrome,” Vysokomolek. Soed. 41A, 256 (1999).
2. R. Murali, “Metrology for gray-scale lithography,” AIP Conf. Proc. 931, 419 (2007).
3. A. Schleunitz and H. Schift, “Fabrication of 3-D pattern with vertical and sloped sidewalls by gray-scale electron-beam lithography and thermal annealing,” Microelectron. Eng. 88, 2736 (2011).