УДК: 535.243.2, 539.23
Optical study of wedge-shaped films. Part II. Experiments
Full text «Opticheskii Zhurnal»
Full text on elibrary.ru
Publication in Journal of Optical Technology
Шаяпов В.Р., Лебедев М.С. Исследование клиновидных пленок оптическими методами. Часть II. Эксперименты // Оптический журнал. 2016. Т. 83. № 7. С. 76–82.
Shayapov V.R., Lebedev M.S. Optical study of wedge-shaped films. Part II. Experiments [in Russian] // Opticheskii Zhurnal. 2016. V. 83. № 7. P. 76–82.
V. R. Shayapov and M. S. Lebedev, "Optical study of wedge-shaped films. Part II. Experiments," Journal of Optical Technology. 83(7), 447-451 (2016). https://doi.org/10.1364/JOT.83.000447
This paper, which is being published in two parts, provides a summary and analysis of the various effects that occur when ellipsometry and reflection spectrophotometry are used to investigate wedge-shaped thin films. Part II of this paper describes the capabilities and limitations of various experimental approaches for studying wedge-shaped films. We describe the results obtained for films produced by atomic-layer deposition and plasma chemical deposition. We study the capabilities of ellipsometry for determining the optical constants and thicknesses of wedge-shaped films. We propose a simple spectrophotometric approach for routine studies of thick wedge-shaped films.
films, wedgeness, atomic-layer deposition, reflection spectra
Acknowledgements:The authors are deeply grateful to Yu. M. Rumyantsev and M. L. Kosinova for assistance and support in performing this study and for the research samples provided.
OCIS codes: 240.0310, 240.2130, 240.6490, 310.6860
References:1. V. R. Shayapov and B. M. Ayupov, “Optical study of wedge-shaped films. Part I. Modeling,” J. Opt. Technol. 83(7), 441–446 (2016) [Opt. Zh. 83(7), 68–75 (2016)].
2. W. A. Pliskin and E. E. Conrad, “Nondestructive determination of thickness and refractive index of transparent films,” IBM J. Res. Dev. 8(1), 43–51 (1964).
3. T. Mishima and K. C. Kao, “Detection of thickness uniformity of film layers in semiconductor devices by spatially resolved ellipso-interferometry,” Opt. Eng. 21, 216074 (1982).
4. H. El Rhaleb, N. Cella, J. R. Roger, D. Fournier, A. C. Boccara, and A. Zuber, “Beam size and collimation effects in spectroscopic ellipsometry of transparent films with optical thickness inhomogeneity,” Thin Solid Films 288, 125–131 (1996).
5. K. Zahraman, B. Nsouli, M. Roumié, J. P. Thomas, and S. Danel, “On the optimization of the PIXE technique for thickness uniformity control of ultra-thin chromium layers deposited onto large surface quartz substrate,” Nucl. Instrum. Methods Phys. Res., Sect. B 249, 447–450 (2006).
6. V. A. Shvets, E. V. Spesivtsev, S. V. Rykhlitskii, and N. N. Mikhailov, “Ellipsometry as a high-precision technique for subnanometer-resolved monitoring of thin-film structures,” Nanotechnol. Russ. 4(3–4), 201–214 (2009) [Rossiiskie Nanotekhnologii 4(3–4), 72–84 (2009)].
7. http://oceanoptics.com/product/nanocalc/.
8. B. M. Ayupov, V. A. Gritsenko, H. Wong, and C. W. Kim, “Accurate ellipsometric measurement of refractive index and thickness of ultrathin oxide film,” J. Electrochem. Soc. 153(12), F277–F282 (2006).
9. A. V. Rzhanov, K. K. Svitashev, and V. K. Sokolov, Fundamentals of Ellipsometry (Nauka, Novosibirsk, 1978).
10. D. A. Holmes, “On the calculation of thin film refractive index and thickness by ellipsometry,” Appl. Opt. 6(1), 168–169 (1967).
11. B. M. Ayupov, V. S. Sulyaeva, V. R. Shayapov, I. A. Zarubin, and V. A. Labusov, “Searching for the starting approximation when solving inverse problems in ellipsometry and spectrophotometry,” J. Opt. Technol. 78(6), 350–354 (2011) [Opt. Zh. 78(6), 3–9 (2011)].
12. B. M. Ayupov, Yu. M. Rumyantsev, and V. R. Shayapov, “Features of determination of thickness of dielectric films obtained in searching experiments,” J. Surf. Investig. 4(3), 452–457 (2010) [Poverkhnost’(3), 100–105 (2010)].
13. R. L. Puurunen, “Surface chemistry of atomic layer deposition: a case study for the trimethylaluminum/water process,” J. Appl. Phys. 97, 121301 (2005).
14. M. Kouda, K. Ozawa, K. Kakushima, P. Ahmet, H. Iwai, Y. Urabe, and T. Yasuda, “Preparation and electrical characterization of CeO2 films for gate dielectrics application: comparative study of chemical vapor deposition and atomic layer deposition processes,” Jpn. J. Appl. Phys. 50, 10PA06 (2011).
15. P. Petrik, T. Gumprecht, A. Nutsch, G. Roeder, M. Lemberger, G. Juhasz, O. Polgar, C. Major, P. Kozma, M. Janosov, B. Fodor, E. Agocs, and M. Fried, “Comparative measurements on atomic layer deposited Al2 O3 thin films using ex situ table top and mapping ellipsometry, as well as X-ray and VUV reflectometry,” Thin Solid Films 541, 131–135 (2013).