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DOI: 10.17586/1023-5086-2020-87-09-54-69
УДК: 535.8; 004.27; 537.5
Directional coupling surface plasmon polaritons electro-optic modulator for optical ring networks-on-chip
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Publication in Journal of Optical Technology
Zhi-Xun Liang, Chuan-Pei Xu, Ai-Jun Zhu, Cong Hu, She-Hui Du, Chun-Xia Zhao. Directional coupling surface plasmon polaritons electro-optic modulator for optical ring networks-on-chip (Электрооптический модулятор направленной связи на основе поверхностных плазмон-поляритонов для кольцевых оптических сетей на кристалле) [на англ. яз.] // Оптический журнал. 2020. Т. 87. № 9. С. 54–69. http://doi.org/10.17586/1023-5086-2020-87-09-54-69
Zhi-Xun Liang, Chuan-Pei Xu, Ai-Jun Zhu, Cong Hu, She-Hui Du, Chun-Xia Zhao. Directional coupling surface plasmon polaritons electro-optic modulator for optical ring networks-on-chip (Электрооптический модулятор направленной связи на основе поверхностных плазмон-поляритонов для кольцевых оптических сетей на кристалле) [in English] // Opticheskii Zhurnal. 2020. V. 87. № 9. P. 54–69. http://doi.org/10.17586/1023-5086-2020-87-09-54-69
Zhi-Xun Liang, Chuan-Pei Xu, Ai-Jun Zhu, Cong Hu, She-Hui Du, and Chun-Xia Zhao, "Directional coupling surface plasmon polariton electro-optic modulator for optical ring networks-on-chip," Journal of Optical Technology . 87(9), 542-553 (2020). https://doi.org/10.1364/JOT.87.000542
Electro-optic modulators are essential components of the optical network-on-chip. To resolve the large footprints, poor thermal stability, and low modulation rate of traditional optoelectronic devices such as micro-ring resonators, a directional coupled electro-optic modulator based on surface plasmon polaritons and coupled mode theory is designed. The modulator controls the change in carrier concentration of indium tin oxide activated material film by applying a voltage to realize electro-optic control. The modulator uses coupled-mode theory to couple the modulated optical signal into a ring waveguide. This type of modulator is suitable for an optical-on-chip network with an optical ring network-on-chip topology. The results show that the device operates at 1550 nm wavelength with a coupling efficiency of more than 90%, the insertion loss is 1.17 dB, the extinction ratio is 15.4 dB, the modulation rate is up to 0.75 Tbit/s, and the size is only 3.8ґ3.2ґ1.2 µm.
electro-optic modulator, surface plasmon polariton, optical ring network-on-chip, indium tin oxide, finite difference time domain, silicon photonics
OCIS codes: 230.4110, 240.6680
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