Investigation of the zinc diffusion process into epitaxial layers of indium phosphide and indium-gallium arsenide grown by molecular beam epitaxy

Andryushkin, V.V., Babichev, A.V., Ber, B.Y., Bugrov, V.Е., Gladyshev, A.G., Karachinsky, L.Y., Kizhaev, S.S., Kolodezniy, E.S., Kuzmenkov, A.G., Maleev, N.A., Novikov, I.I., Rochas, S.S., Khvostikov, V.P.

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For Russian citation (Opticheskii Zhurnal):

Андрюшкин В.В., Гладышев А.Г., Бабичев А.В., Колодезный Е.С., Новиков И.И., Карачинский Л.Я., Рочас С.С., Малеев Н.А., Хвостиков В.П., Бер Б.Я., Кузьменков А.Г., Кижаев С.С., Бугров В.Е. Исследование процесса диффузии цинка в эпитаксиальные слои фосфида индия и индия галлия арсенида, выращенные методом молекулярно-пучковой эпитаксии // Оптический журнал. 2021. Т. 88. № 12. С. 87–92. http://doi.org/10.17586/1023-5086-2021-88-12-87-92

Andryushkin V.V., Gladyshev A.G., Babichev A.V., Kolodezniy E.S., Novikov I.I., Karachinskiy L.Ya., Rochas S.S., Maleev N.A., Khvostikov V.P., Ber B.Ya., Kuzmenkov A.G., Kizhaev S.S., Bougrov V.E. Investigation of the zinc diffusion process into epitaxial layers of indium phosphide and indium-gallium arsenide grown by molecular beam epitaxy [in Russian] // Opticheskii Zhurnal. 2021. V. 88. № 12. P. 87–92. http://doi.org/10.17586/1023-5086-2021-88-12-87-92

For citation (Journal of Optical Technology):

V. V. Andryushkin, A. G. Gladyshev, A. V. Babichev, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, S. S. Rochas, N. A. Maleev, V. P. Khvostikov, B. Ya. Ber, A. G. Kuzmenkov, S. S. Kizhaev, and V. E. Bougrov, "Investigation of the zinc diffusion process into epitaxial layers of indium phosphide and indium-gallium arsenide grown by molecular beam epitaxy," Journal of Optical Technology. 88(12), 742-745 (2021). https://doi.org/10.1364/JOT.88.000742

Abstract:

The results of an investigation of the peculiarities of the zinc diffusion process into epitaxial layers of indium phosphide and indium-gallium arsenide aimed at the fabrication of an avalanche photodiode for a single-photon detector are presented. The diffusion of zinc into indium phosphide through an intermediate layer of indium-gallium arsenide ensures better surface quality compared with the direct diffusion of zinc into the indium phosphide layer. We discovered that systems such as a quartz reactor with resistive heating with an internal solid-state source of zinc vapor and the reactor of a metal-organic chemical vapor deposition setup with hydrogen as a carrier gas make it possible to achieve similar concentrations of doping p-type impurity, which exceed 2×10¹⁸cm⁻³. The depth of zinc diffusion in the indium phosphide layer ranged from 2 to 3.5 µm, depending on the temperature and duration of the diffusion process. Such depths are required for fabrication of effective avalanche photodiodes.

Keywords:

molecular beam epitaxy, heterostructure, diffusion, avalanche photodiode

Acknowledgements:

The research was supported by the Ministry of Science and Higher Education of the Russian Federation, project No. 2019-1442.

OCIS codes: 290.1990, 040.1345

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