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DOI: 10.17586/1023-5086-2022-89-05-78-91
УДК: 621.38, 628.955, 620.92
Improving the efficiency of solar cells based on CsSn0.5Ge0.5I3 perovskite by using ZnO nanorods
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Publication in Journal of Optical Technology
Mehrabian M., Afshar E.N. Improving the efficiency of solar cell based on CsSn0.5Ge0.5I3 perovskite by using ZnO nanorods. Повышение эффективности солнечных элементов на основе перовскита CsSn0,5Ge0,5I3 с помощью наностержней ZnO [на англ. яз.] // Оптический журнал. 2022. Т. 89. № 5. С. 78–91. http://doi.org/10.17586/1023-5086-2022-89-05-78-91
Mehrabian M., Afshar E.N. Improving the efficiency of solar cell based on CsSn0.5Ge0.5I3 perovskite by using ZnO nanorods. Повышение эффективности солнечных элементов на основе перовскита CsSn0,5Ge0,5I3 с помощью наностержней ZnO [in English] // Opticheskii Zhurnal. 2022. V. 89. № 5. P. 78–91. http://doi.org/ 10.17586/1023-5086-2022-89-05-78-91
Masood Mehrabian and Elham Norouzi Afshar, "Improving the efficiency of solar cells based on CsSn0.5Ge0.5I3 perovskite by using ZnO nanorods," Journal of Optical Technology. 89(5), 302-311 (2022). https://doi.org/10.1364/JOT.89.000302
Subject of research. The environmental friendly tin and germanium-based halide perovskite materials are promising candidates attracting more attention as lead-free halide perovskite solar cells. However, the limited power conversion efficiency of these perovskites is an important issue in solar cells field. Therefore, in present study, a different lead-free perovskite was used to reach higher power conversion efficiency power conversion efficiency. Devices with Indium Tin Oxide/Electron transport layer/Perovskite/Hole transport layer/Ag structure but different absorber layers were simulated. Simulation was done using the solar cell capacitance simulator SCAPS-1D to investigate the photovoltaic performance of solar cells with CsGeI3 and CsSnI3 perovskites as absorber layer. Methodology. Simulation was done by using of SCAPS software which is a one dimensional solar cell simulation platform developed at the Department of Electronics and Information Systems of the University of Gent, Belgium. Main results. The effect of absorber layer thickness was investigated
and maximum power conversion efficiency of 10.51% was obtained for 1000 nm thick of CsGeI3, while maximum value of 12.83% was obtained for 400 nm thick of CsGeI3. Then for further increase the efficiency, devices with an alternative lead-free CsSn0.5Ge0.5I3 perovskite including planar ZnO layer and ZnO nanorod arrays as electron transport layers was used in simulation and the thickness of absorber layer was optimized for both devices. For maximum power conversion efficiency of devices, the values of 17.56 and 22.61% were achieved for devices with ZnO layer and ZnO-NR respectively. It is note to that simulation results of this study could provide a perspective towards fabricating an environmental friendly perovskite-based solar cell. Practical significance. The main significance of present work is obtaining a significant power conversion efficiency of 22.61% for a device based on environmental friendly perovskite.
A similar work was done in 2021 by M. Azadinia et al., which a comparable power conversion efficiency of 26.9% was reported for a device with CsSn1–xGexI3 perovskite.
lead-free perovskite, CsGeI3, CsSnI3, CsSn0.5Ge0.5I3, ZnO nanorods
OCIS codes: 250.0250
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