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DOI: 10.17586/1023-5086-2023-90-02-17-25
Performance enhancement of AlGaN-based deep ultraviolet laser diode using two-stepped doped lower waveguide
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Publication in Journal of Optical Technology
Sajid Ullah Khan, Mussaab Ibrahim Niass, Zhang Aoxiang, Fang Wang, Juin J. Liou, Yuhuai Liu. Performance enhancement of AlGaN-based deep ultraviolet laser diode using two stepped-doped lower waveguide (Повышение производительности лазерного диода коротковолнового ультрафиолетового излучения на основе AlGaN с помощью низколегированного двухступенчатого волновода) [in English] // Opticheskii Zhurnal. 2023. V. 90. № 2. P. 17–25. http:doi.org/10.17586/1023-5086-2023-90-02-17-25
Sajid Ullah Khan, Mussaab Ibrahim Niass, Zhang Aoxiang, Fang Wang, Juin J. Liou, Yuhuai Liu. Performance enhancement of AlGaN-based deep ultraviolet laser diode using two stepped-doped lower waveguide (Повышение производительности лазерного диода коротковолнового ультрафиолетового излучения на основе AlGaN с помощью низколегированного двухступенчатого волновода) [на англ. языке] // Оптический журнал. 2023. Т. 90. № 2. С. 17–25. http:doi.org/ 10.17586/1023-5086-2023-90-02-17-25
Sajid Ullah Khan, Mussaab Ibrahim Niass, Aoxiang Zhang, Fang Wang, Juin J. Liou, and Yuhuai Liu, "Performance enhancement of an AlGaN-based deep-ultraviolet laser diode using a two-stepped doped lower waveguide," Journal of Optical Technology. 90(2), 62-67 (2023). https://doi.org/10.1364/JOT.90.000062
Subject of Study. A deep-ultraviolet laser diode performance is improved using a two-stepped Si-doped lower waveguide. Method. The impact of the variations on the AlGaN-based deep ultraviolet laser diodes has been evaluated based on the simulated results after the theoretical calculations. The two AlGaN-based ultraviolet laser diodes as traditional device and a proposed device have been analyzed comparatively based on their performances within a nomination wavelength region range of 269-280 nm. Main Results. Using a two-stepped Si-doped lower waveguide, the lasing threshold laser diode current decreases in the proposed device D2 in comparison to the traditional device D1. The operating threshold laser diode voltage of D1 is 13.8 V, and D2 is 4.24 V, respectively, and a lasing threshold laser diode current of 0.4 A and 0.002 A. Practical significance. The optimization of the AlGaN-based ultraviolet laser diodes design following the perfect bulk aluminium nitride substrate in the traditional device is the crucial factor of the practical significance of the scientific field laser diode utilized in the proposed device. The deep-ultraviolet laser diodes performance is improved when a suitably constructed two-stepped Si-doped lower waveguide substitutes the traditional lower waveguide. The noted improvements are the reduction in total optical loss with the improved optical confinement factor. It's primarily due to an increase in hole injection current and a decrease in electron leakage current.
laser diodes, semiconductor, multiple quantum well, step doping
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