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DOI: 10.17586/1023-5086-2023-90-02-37-45
AlGaN-based laser diodes with reduced Al composition in Quantum Barriers in the Deep ultraviolet region
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Publication in Journal of Optical Technology
Sajid Ullah Khan, Wang Yao, Fang Wang, Yuhuai Liu. AlGaN-based laser diodes with reduced Al composition in Quantum Barriers in the Deep ultraviolet region (Лазерные диоды коротковолнового ультрафиолетового излучения на основе нитрида алюминия-галлия с пониженным содержанием алюминия в квантовом барьере) [на англ. языке] // Оптический журнал. 2023. Т. 90. № 2. С. 37–45. http:doi.org/10.17586/1023-5086-2023-90-02-37-45
Sajid Ullah Khan, Wang Yao, Fang Wang, Yuhuai Liu. AlGaN-based laser diodes with reduced Al composition in Quantum Barriers in the Deep ultraviolet region (Лазерные диоды коротковолнового ультрафиолетового излучения на основе нитрида алюминия-галлия с пониженным содержанием алюминия в квантовом барьере [in English] // Opticheskii Zhurnal. 2023. V. 90. № 2. P. 37–45. http:doi.org/10.17586/1023-5086-2023-90-02-37-45
Sajid Ullah Khan, Wang Yao, Fang Wang, and Yuhuai Liu, "AlGaN-based laser diodes with reduced Al composition in quantum barriers in the deep ultraviolet region," Journal of Optical Technology. 90(2), 75-80 (2023). https://doi.org/10.1364/JOT.90.000075
Subject of Study. In AlGaN-based deep ultraviolet laser diodes, quantum well affects the performance in the active region of the deep ultraviolet laser diodes. Moreover, the composition of Aluminum in Quantum Barriers in quantum well matters to the performance of AlGaN-based deep ultraviolet laser diodes. It might be observed effectively by looking at performance indicators like the emitted power, optical confinement factor (band diagram, carrier concentration, and stimulated recombination). Method. Two deep ultraviolet laser diode devices with a nominated wavelength of 267.5 nm are simulated and compared in this paper using the Crosslight program LASTIP. A proposed deep ultraviolet laser diode device В with a reduced Al composition in quantum barrier is used in the active region as opposed to the reference deep ultraviolet laser diode device А. Main Results. It led to an improvement in emitted output power of 0.109 W with a reduced injection current of 0.02 A and an improvement in optical confinement factor of 19%. Practical significance. The structure of the reference device is inspired by experimental structure. The results of the proposed device are calculated and are evaluated based on the parameters such as improved conduction band barrier height, reduced valence band barrier height, and an improved stimulated recombination rate. It outperforms the deep ultraviolet laser diode for the reference device.
deep ultraviolet laser diode, optical power, Al composition, quantum barriers, optical confinement
OCIS codes: 140.3610, 130.5990, 040.4200, 170.4520
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