DOI: 10.17586/1023-5086-2023-90-04-35-47
УДК: 538.975
Modification of optical and electrical properties of lead selenide PbSe films by nanosecond laser pulses with a wavelength of 1.064 microns
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Ольхова А.А., Патрикеева А.А., Дубкова М.А., Сергеев М.М. Модификация оптических и электрических свойств плёнок селенида свинца PbSe наносекундными импульсами лазерного излучения с длиной волны 1,064 мкм // Оптический журнал. 2023. Т. 90. С. 35—47. http://doi.org/10.17586/1023-5086-2023-90-04-35-47
Olkhova A.A., Patrikeeva A.A., Dubkova M.A., Sergeev M.M. Modification of optical and electrical properties of lead selenide PbSe films by nanosecond laser pulses with a wavelength of 1.064 microns // Opticheskii Zhurnal. 2023. V. 90. № 4. P. 35–47. http: //doi.org/10.17586/1023-5086-2023-90-04-35-47
The subject of the study. The paper presents the results of a study on the change in the optical and electrical characteristics of PbSe films exposed to nanosecond laser pulses. Objective. Investigation of the features of the modification of the structure and properties of lead selenide (PbSe) films up to 1 µm thick deposited on coverslip plates after exposure to nanosecond laser pulses with a wavelength of 1064 nm in the mode of linebyline scanning of the radiation spot. Main results. The change in the optical properties of the films depended on the intensity of the laser radiation. At power densities less than 1,45 kW/cm2, irradiation led to a significant decrease in the reflection of the PbSe film in the visible spectral range, while the film remained opaque and its resistance increased by more than 2 times. At high power densities, there was a gradual increase in transmission and a slight decrease in the reflection of the PbSe film in the visible spectral range. Practical significance. It is shown that the use of near infrared laser pulses makes it possible to correct the optical and electrical characteristics of chalcogenide films. PbSe films are widely used as photosensitive elements in gas analysis devices, where high radiation absorption is important, as well as low electrical resistance. Exposure of films to laser radiation makes it possible to achieve the desired characteristics, replacing heat treatment in an oven in the technological process.
Acknowledgment: the presented research was carried out at the expense of a grant from the Russian Science Foundation (Project № 197910208).
chalcogenide films, laser action, surface structuring, nanosecond laser pulses, photosensitivity, film resistivity
OCIS codes: 140.3390.
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