Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon

Lendyashova, V.V., Ilkiv I.V., Talalaev V.G., Shugabaev Talgat, Reznik, R.R., Cirlin, G.Е.

For Russian citation (Opticheskii Zhurnal):

Лендяшова В.В., Илькив И.В., Талалаев В.Г., Шугабаев Т., Резник Р.Р., Цырлин Г.Э. Оптические свойства квантовых точек арсенида индия InAs в кремнии // Оптический журнал. 2025. Т. 92. № 4. С. 14–21. http://doi.org/10.17586/1023-5086-2025-92-04-14-21

Lendyashova V.V., Ilkiv I.V., Talalaev V.G., Shugabaev T., Reznik R.R., Cirlin G.E. Optical properties of InAs quantum dots in a Si matrix beam [in Russian] // Opticheskii Zhurnal. 2025. V. 92. № 4. P. 14–21. http://doi.org/10.17586/1023-5086-2025-92-04-14-21

For citation (Journal of Optical Technology):

Abstract:

Subject of study. Silicon Si epitaxial layers with embedded indium arsenide InAs quantum dots. Aim of study. Experimental study of the luminescent characteristics of InAs quantum dots in a Si matrix and analyze the relationship between the temperature and growth method of the capping Si layer and the photoluminescence intensity of the heterostructure. Method. Si epitaxial layers with embedded InAs quantum dots were obtained by molecular beam epitaxy technology. The optical properties were studied using low-temperature photoluminescence at 10–120 K. Main results. The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been studied. The photoluminescence signal at 1.65 μm from submonolayer quantum dots at low temperatures up to 120 K was obtained. It was established that the use of a two-stage method of silicon overgrowing InAs nanoislands makes it possible to increase the photoluminescence intensity by improving the crystalline quality of heterostructures. Analysis of the temperature dependence allowed us to calculate an activation energy for electrons confined in the quantum dot’s potential well at the level of the thermal energy at room temperature (30 and 25 meV respectively). Practical significance. The results obtained in the study of the optical properties of heterostructures with submonolayer InAs quantum dots can serve as a basis for the development of new optoelectronic devices based on silicon technologies.

Keywords:

quantum dots, indium arsenide, molecular beam epitaxy, semiconductors, silicon, heterostructures

Acknowledgements:

optical measurements were carried out with the financial support of the Russian Science Foundation Grant № 23-79-01117. For growth of experimental samples the authors acknowledge Saint-Petersburg State University for a Research Project № 87465891. Structural properties of grown samples were studied under support of the Ministry of Science and Higher Education of the Russian Federation, Research Project № 2019-1442 (Project reference number FSER-2020-0013)

OCIS codes: 130.5990, 040.6040, 130.0250, 130.3120, 060.4510

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