Periodic nanohole array structure induced on a silicon surface by direct writing with a femtosecond laser

Yuan D. Q., Zhou M., Wu Q.R., Xu J.T., Yang H.F.

Полный текст на elibrary.ru

Публикация в Journal of Optical Technology

Ссылка для цитирования:

D. Q. Yuan, M. Zhou, Q. R Wu, J. T. Xu, H. F. Yang Periodic nanohole array structure induced on a silicon surface by direct writing with a femtosecond laser [на англ. яз.] // Оптический журнал. 2015. Т. 82. № 6. С. 31–35.

D. Q. Yuan, M. Zhou, Q. R Wu, J. T. Xu, H. F. Yang Periodic nanohole array structure induced on a silicon surface by direct writing with a femtosecond laser [in English] // Opticheskii Zhurnal. 2015. V. 82. № 6. P. 31–35.

Ссылка на англоязычную версию:

D. Q. Yuan, Q. R. Wu, J. T. Xu, M. Zhou, and H. F. Yang, "Periodic nanohole array structure induced on a silicon surface by direct writing with a femtosecond laser," Journal of Optical Technology. 82(6), 353-356 (2015). https://doi.org/10.1364/JOT.82.000353

Аннотация:

A regular micro-apparatus covered with periodic nanohole, nanoridge, and ripple structures on silicon bulk (with crystal orientation of 110) was formed by micromachining with a tightly focused beam of a femtosecond laser with a wavelength of 800 nm, a repetition rate of 1 kHz, and a pulse length of 130 fs in air. We used laser direct writing technology to form periodic double-row nanohole structures, and the laser was focused with a 10× focusing objective lens (NA=0.3). We investigated the relationship between the width of structures and the speed of processing to provide knowledge of the evolution of the nanohole and nanoridge structures.

Ключевые слова:

фемтосекундный лазер, матрицы с наноотверстиями, пульсации, прямая запись

Благодарность:

Работа выполнена при финансовой поддержке Национального фонда естественных наук Китая (грант № 51405181), Молодежного фонда естественных наук провинции Цзянсу (грант № BK20130407), Национального фонда естественных наук колледжей и университетов провинции Цзянсу (грант № 13KJB460001), Научного фонда трибологии государственной ключевой лаборатории трибологии (грант № SKLTKF10B06).

Коды OCIS: 220.4610, 140.3290

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