Using laser sputtering to obtain semiconductor nanoheterostructures

Звонков Б.Н., Вихрова О.В., Данилов Ю.А., Демидов Е.С., Демина П.Б., Дорохин М.В., Дроздов Ю.Н., Подольский В.В., Сапожников М.В. Применение лазерного распыления для получения полупроводниковых наногетероструктур // Оптический журнал. 2008. Т. 75. № 6. С. 56–61.

Zvonkov B.N., Vikhrova O.V., Danilov Yu.A., Demidov E.S., Demina P.B., Dorokhin M.V., Drozdov Yu.N., Podolskiy V.V., Sapozhnikov M.V. Using laser sputtering to obtain semiconductor nanoheterostructures [in Russian] // Opticheskii Zhurnal. 2008. V. 75. № 6. P. 56–61.

B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, V. V. Podol’skiĭ, E. S. Demidov, Yu. N. Drozdov, and M. V. Sapozhnikov, "Using laser sputtering to obtain semiconductor nanoheterostructures," Journal of Optical Technology. 75 (6), 389-393 (2008). https://doi.org/10.1364/JOT.75.000389

Laser sputtering of solid-state targets in a hydrogen atmosphere has been used to form semiconductor nanoheterostructures. Impurities (Te or Mn) in the form of delta-doped layers obtained by laser sputtering of the corresponding targets in the process of vapor-phase epitaxy using organometallic compounds can be introduced into light-emitting structures based on the InGaAs/GaAs system to make it possible to control the spectrum and the electroluminescence intensity. Reducing the hydrogen pressure in the reactor to 25-50Torr allows laser deposition to be carried out at reduced temperatures of the epitaxial layers of the base material and makes it possible to obtain GaAs and InAs semiconductors with a high manganese-doping level that demonstrate ferromagnetic properties at room temperature.