Using the semiconductor properties of certain modifications of titanium silicides obtained by rapid heat treatment to create photodetectors

Емельяненко Ю.С., Колос В.В., Маркевич М.И., Стельмах В.Ф., Чапланов А.М. Использование полупроводниковых свойств некоторых модификаций силицидов титана, полученных методом быстрой термической обработки, для создания фотоприемников // Оптический журнал. 2010. Т. 77. № 8. С. 72–74.

Emelianenko Yu.S., Kolos V.V., Markevich M.I., Stelmakh V.F., Chaplanov A.M. Using the semiconductor properties of certain modifications of titanium silicides obtained by rapid heat treatment to create photodetectors [in Russian] // Opticheskii Zhurnal. 2010. V. 77. № 8. P. 72–74.

Yu. S. Emel’yanenko, V. V. Kolos, M. I. Markevich, A. M. Chaplanov, and V. F. Stel’makh, "Using the semiconductor properties of certain modifications of titanium silicides obtained by rapid heat treatment to create photodetectors," Journal of Optical Technology. 77(8), 519-520 (2010). https://doi.org/10.1364/JOT.77.000519

The optical properties of the Au/TiSi2(C49)/Sin-type/Si system, formed by rapid heat treatment, have been investigated. It is shown that the maximum spectral sensitivity occurs in the 750-nm region. The maximum sensitivity reaches 35mA/W in the 750-800-nm wavelength region. It is concluded that, based on the given structure, which is completely compatible with known technology used for implementing semiconductor devices based on silicon (silicon technology), it is possible to create a photodetector that is sensitive in the 350-1050-nm region.