УДК: 621.382, 621.383.5

Analysis of structural–technological limitations in silicon circuits for reading photodiode signals in the IR region

Vasiliev, V.V., Kozlov, A.I., Marchishin, I.V., Sidorov, Y.G., Yakushev, M.V.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Васильев В.В., Козлов А.И., Марчишин И.В., Сидоров Ю.Г., Якушев М.В. Анализ структурно-технологических ограничений в кремниевых схемах считывания сигналов фотодиодов инфракрасного диапазона // Оптический журнал. 2014. Т. 81. № 7. С. 39–45.

Vasiliev V.V., Kozlov A.I., Marchishin I.V., Sidorov Yu.G., Yakushev M.V. Analysis of structural–technological limitations in silicon circuits for reading photodiode signals in the IR region [in Russian] // Opticheskii Zhurnal. 2014. V. 81. № 7. P. 39–45.

For citation (Journal of Optical Technology):

V. V. Vasiliev, A. I. Kozlov, I. V. Marchishin, Yu. G. Sidorov, and M. V. Yakushev, "Analysis of structural–technological limitations in silicon circuits for reading photodiode signals in the IR region," Journal of Optical Technology. 81(7), 392-396 (2014). https://doi.org/10.1364/JOT.81.000392

Abstract:

This paper presents the results of a study of the scientific and engineering principles of the creation of silicon multiplexers intended for reading out and preprocessing photodetector signals in the IR ranges 8–14 and 3–5 μm. The noise equivalent temperature difference is estimated for far-IR photodetectors based on silicon multiplexers with linewise and framewise accumulation of signals from HgCdTe photodiodes (PDs). The features of how the structural–technological limitations in the silicon readout circuits affect the characteristics of the IR photodetectors are analyzed for a wide range of parameters of HgCdTe PDs and a wide range of technological design norms for fabricating silicon multiplexers.

Keywords:

silicon multiplexer, multielement IR photodetector, photocurrent silicon readout circuit, HgCdTe photodiode

Acknowledgements:

The authors express gratitude to A. K. Panfilenko for work on the creation of multiplexers with a 30 μm cell step, on the technological basis of OAO Integral, and to P. R. Mashevich and A. A. Romanov for help in fabricating silicon multiplexers with a 35 μm step, on the technological basis of OAO Angstrem.

OCIS codes: 040.3060, 110.3080, 130.5990

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