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Solid-state laser chip based on a KGd(WO4)2:Nd3+ crystal with semiconductor end pumping and passive Q-switching, lasing at wavelength 1.35 μm
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Иванов П.С., Мочалов И.В., Сандуленко А.В. Твердотельный чип-лазер на кристалле KGd(WO4)2:Nd3+ с торцевой полупроводниковой накачкой и пассивной модуляцией добротности, генерирующий на длине волны 1,35 мкм // Оптический журнал. 2015. Т. 82. № 12. С. 14–17.
Ivanov P.S., Mochalov I.V., Sandulenko A.V. Solid-state laser chip based on a KGd(WO4)2:Nd3+ crystal with semiconductor end pumping and passive Q-switching, lasing at wavelength 1.35 μm [in Russian] // Opticheskii Zhurnal. 2015. V. 82. № 12. P. 14–17.
P. S. Ivanov, I. V. Mochalov, and A. V. Sandulenko, "Solid-state laser chip based on a KGd(WO4)2:Nd3+ crystal with semiconductor end pumping and passive Q-switching, lasing at wavelength 1.35 μm," Journal of Optical Technology. 82(12), 789-791 (2015). https://doi.org/10.1364/JOT.82.000789
We studied a miniature laser source with an end-fed semiconductor pump in pulsed-periodic and cw mode; the pump had an active element that consisted of a KGd(WO4)2:Nd3+ crystal lasing at wavelength 1.35 μm. The laser power was studied as a function of pump-pulse width. It was shown that the output power from a chip laser of this type is capable of reaching 0.25 W in pulse-periodic mode with a pump power of 1.9 W, and 0.06 W in Q-switched mode at a pump power of 1.9 W. The effect of optical cavity length on the width of the lasing pulse from the laser was also studied. The behavior of a laser in which the cavity consisted of only two elements—a KGd(WO4)2:Nd3+ active element with a backstop mirror deposited on one end, and a YAG:V3+ passive laser gate with an exit mirror deposited on one end. The cavity in this two-element laser chip was 5 mm long. It was shown that such a laser chip can have a laser-pulse width of 7 ns or less.
KGd(WO4)2:Nd3+ crystal, laser chip, diode pumping, passive Q-switching, YAG:V3+ passive laser gate
Acknowledgements:This work was financially supported by the Russian Federation Ministry of Education and Science (Scientific Research and Development Program Identifier: RFMEFI58114X0006).
OCIS codes: 140.3540, 140.3530, 140.3480
References:1. I. V. Mochalov, “Laser and nonlinear properties of the potassium gadolinium tungstate laser crystal KGd(WO4 ) 2:Nd 3+ -(KGW-Nd),” Opt. Eng. 36(6), 1660–1669 (1997).
2. A. V. Sandulenko and N. A. Kulagin, “Spectroscopy of radiation-induced and structural defects in garnet crystals with V and Cr impurity ions,” Opt. Spectrosc. 106(3), 388 (2009) [Opt. Spektrosk. 106(3), 442–449].
3. K. Thyagarajan and A. Ghatak, Fiber Optic Essentials (Wiley-Interscience, New York, 2007).