Effect of gas pressure and film thickness on the optical constants of transparent conducting oxide based on zinc oxide

Abd El-Raheem, M. M., Diab, A. K., Alhuthali, Abdullah, Al-Baradi, Ateyyah M.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

M. M. Abd El-Raheem, A. K. Diab, Abdullah Alhuthali, Ateyyah M. Al-Baradi Effect of gas pressure and film thickness on the optical constants of transparent conducting oxide based on zinc oxide [на англ. яз.] // Оптический журнал. 2016. Т. 83. № 1. С. 40–47.

M. M. Abd El-Raheem, A. K. Diab, Abdullah Alhuthali, Ateyyah M. Al-Baradi Effect of gas pressure and film thickness on the optical constants of transparent conducting oxide based on zinc oxide [in English] // Opticheskii Zhurnal. 2016. V. 83. № 1. P. 40–47.

For citation (Journal of Optical Technology):

M. M. Abd El-Raheem, A. K. Diab, Abdullah Alhuthali, and Ateyyah M. Al-Baradi, "Effect of gas pressure and film thickness on the optical constants of transparent conducting oxide based on zinc oxide," Journal of Optical Technology. 83(1), 30-35 (2016). https://doi.org/10.1364/JOT.83.000030

Abstract:

Thin films of aluminum zinc oxide are prepared using DC magnetron sputtering. It was found that changing the thickness of the film as well as the pressure of the argon affects the transmittance, optical gap, width of the band tails of the localized state, refractive index, and real and imaginary parts of the dielectric function. The real and imaginary parts of the optical conductivity as well as the volume and surface energy loss functions are investigated in light of changing the thickness of the films and argon pressure.

Keywords:

thin film, sputtering, optical energy gap, refractive index, optical conductivity

OCIS codes: 170.5810

References:

1. Major S., Chopra K.L. Indium-doped zinc oxide films as transparent electrodes for solar cells // Sol. Energy Mater. 1988. V. 17. № 5. P. 319–327.
2. Zhang D.H., Yang T.L., Ma J., Wang Q.P., Gao R.W., Ma H.L. Preparation of transparent conducting ZnO:Al films on polymer substrates by rf magnetron sputtering // Appl. Surf. Sci. 2000. V. 158. № 1. P. 43–48.
3. Minami T., Sonohara H., Takata S., Sato H. Highly transparent and conductive zinc-stannate thin films prepared by RF magnetron sputtering // Jap. J. Appl. Phys. 1994. V. 33. № 12. P. 1693.

4. Lau W.S., Fonash S.J. Highly transparent and conducting zinc oxide films deposited by activated reactive evaporation // J. Elec. Mater. 1987. V. 16. № 3. P. 141–149.
5. Nunes P., Fortunato E., Martins R. Influence of the post-treatment on the properties of ZnO thin films // Thin Solid Films. 2001. V. 383. № 1. P. 277–280.
6. Hu J., Gordon R. G. Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition // J. Appl. Phys. 1992. V. 71. № 2. P. 880–890.
7. Natsume Y., Sakata H. Zinc oxide films prepared by sol-gel spin-coating // Thin solid films. 2000. V. 372. № 1. P. 30–36.
8. Lokhande B.J., Uplane M.D. Structural, optical and electrical studies on spray deposited highly oriented ZnO films // Appl. Surf. Sci. 2000. V. 167. № 3 . P. 243–246.
9. Bose S., Ray S., Barua A.K. Textured aluminium-doped ZnO thin films prepared by magnetron sputtering // J. Phys. D: Appl. Phys. 1996. V. 29. № 7. P. 1873.
10. Ellmer K. Magnetron sputtering of transparent conductive zinc oxide: Relation between the sputtering parameters and the electronic properties // J. Phys. D: Appl. Phys. 2000. V. 33. № 4. P. 17.
11. Nunes P., Fernandes B., Fortunato E., Vilarinho P., Martins R. Performances presented by zinc oxide thin films deposited by spray pyrolysis // Thin Solid Films. 1999. V. 337. № 1. P. 176–179.
12. Chou Y.H., Chau J.L.H., Wang W.L., Chen C.S., Wang S.H., Yang C.C. Preparation and characterization of solid-state sintered aluminum-doped zinc oxide with different alumina contents // Bull. Mater. Sci. 2011. V. 34. № 3. P. 477–482.
13. Zhou H.M., Yi D.Q., Yu Z.M., Xiao L.R., Li J. Preparation of aluminum doped zinc oxide films and the study of their microstructure, electrical and optical properties // Thin Solid Films. 2007. V. 515. № 17. P. 6909–6914.
14. Kim H., Pique A., Horwitz J.S., Murata H., Kafafi Z.H., Gilmore C. M., Chrisey D.B. Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices // Thin Solid Films. 2000. V. 377. P. 798–802.
15. Fortunato E., Nunes P., Marques A., Costa D., Águas H., Ferreira I., Martins R. Transparent, conductive ZnO:Al thin film deposited on polymer substrates by RF magnetron sputtering // Surf. Coat. Tech. 2002. V. 151. P. 247–251.
16. Ko M., Song P.K., Shigesato Y., Frach P., Mizukami A., Suzuki K. Al-doped ZnO films deposited by reactive magnetron sputtering in mid-frequency mode with dual cathodes // Jap. J. Appl. Phys. 2002. V. 41. № 2. P. 814.
17. Jeong S.H., Lee J.W., Lee S.B., Boo J.H. Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their structural, electrical and optical properties // Thin Solid Films. 2003. V. 435. № 1. P. 78–82.
18. Hong R.J., Jiang X., Szyszka B., Sittinger V., Pflug A. Studies on ZnO:Al thin films deposited by in-line reactive mid-frequency magnetron sputtering // Appl. Surf. Sci. 2003. V. 207. № 1. P. 341–350.
19. Kim H., Horwitz J.S., Qadri S.B., Chrisey D.B. Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition // Thin Solid Films. 2002. V. 420. № 107. P. 111.
20. Fang G., Li D., Yao B.L. Fabrication and vacuum annealing of transparent conductive AZO thin films prepared by DC magnetron sputtering // Vacuum. 2002. V. 68. № 4. P. 363–372.
21. Wu G.M., Chen Y.F., Lu H.C. Aluminum-doped zinc oxide thin films prepared by sol-gel and RF magnetron sputtering // VIII Inter. Conf. 2010. P. 34.
22. Bidmeshkipour S.Shahtahmasebi N. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering // Semiconductors. 2013. V. 47. № 6. P. 787–790.
23. Al-Ofi H.H., El-Raheem M.M., Al-Baradi A.M., Atta A.A. Structural and optical properties of Al2ZnO4 thin films deposited by DC sputtering technique // J. Non-Oxide Glasses. 2012. V. 3. № 3. P. 39–54.
24. Abd El-Raheem M.M., Ali H.M., El-Husainy N.M. Characterization of electron beam evaporated CdTe thin films for optoelectronic devices // J. Optoelec. Adv. Mater. 2009. V. 11. № 6. P. 813–819.
25. Pal U., Samanta D., Ghorai S., Chaudhuri A.K. Optical constants of vacuum-evaporated polycrystalline cadmium selenide thin films // J. Appl. Phys. 1993. V. 74. № 10. P. 6368–6374.
26. Steckl A.J., Mohammed G. The effect of ambient atmosphere in the annealing of indium tin oxide films // J. Appl. Phys. 1980. V. 51. № 7. P. 3890–3895.

27. El-Nahass M.M., Atta A.A., El-Sayed H.E.A., El-Zaidia E.F.M. Structural and optical properties of thermal evaporated magnesium phthalocyanine (MgPc) thin films // Appl. Surf. Sci. 2008. V. 254. № 8. P. 2458–2465.
28. El-Nahass M.M., El-Deeb A.F., Metwally H.S., Hassanien A.M. Structural and optical properties of iron (III) chloride tetraphenylporphyrin thin films // Eur. Phys. J. Appl. Phys. 2010. V. 52. № 1. P. 10403.
29. Kwak D.J., Park K.I., Kim B.S., Lee S.H., Lee S.J., Lim D.G. Argon gas pressure and substrate temperature dependences of ZnO:Al film by magnetron sputtering // J. Kor. Phys. Soc. 2004. V. 12. № 1. P. 23–43.
30. El-Nahass M.M., Atta A.A., El-Raheem M.M., Hassanien A.M. Structural and optical properties of DC sputtered Cd2SnO4 nanocrystalline films // J. Alloy. Comp. 2014. V. 585. P. 1–6.
31. Caglar Y., Ilican S., Caglar M. Single-oscillator model and determination of optical constants of spray pyrolyzed amorphous SnO2 thin films // Euro. Phys. J. B-Cond. Matt. Comp. Syst. 2007. V. 58. № 3. P. 251–256.
32. Pankove J. Optical Processes in Semiconductors. Courier Corporation, 2012.
33. Krishna M.G., Pillier J.S., Bhattacharya A.K. Variable optical absorption edge in ion beam sputtered thin ytterbium oxide films // Thin Solid Films. 1999. V. 357. № 2. P. 218–222.