УДК: 535.339:[548.5:546.48’23’76]

Optical and lasing characteristics of single-crystal CdSe:Cr2+ active elements grown by the Bridgman method

Kovalenko, N.O., Kapustnik, A.K., Gerasimenko, A.S., Eremeykin, O.N., Egorov, A.S., Sofronov, D.S.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Коваленко Н.О., Капустник А.К., Герасименко А.С., Еремейкин О.Н., Егоров А.С., Софронов Д.С. Оптические и генерационные характеристики монокристаллических активных элементов CdSe:Cr2+, выращенных по методу Бриджмена // Оптический журнал. 2016. Т. 83. № 7. С. 10–14.

Kovalenko N.O., Kapustnik A.K., Gerasimenko A.S., Eremeykin O.N., Egorov A.S., Sofronov D.S. Optical and lasing characteristics of single-crystal CdSe:Cr2+ active elements grown by the Bridgman method [in Russian] // Opticheskii Zhurnal. 2016. V. 83. № 7. P. 10–14.

For citation (Journal of Optical Technology):

N. O. Kovalenko, A. K. Kapustnik, A. S. Gerasimenko, O. N. Eremeĭkin, A. S. Egorov, and D. S. Sofronov, "Optical and lasing characteristics of single-crystal CdSe:Cr²⁺ active elements grown by the Bridgman method," Journal of Optical Technology. 83(7), 397-399 (2016). https://doi.org/10.1364/JOT.83.000397

Abstract:

The Bridgman method has been used to grow CdSe ingots doped with Cr²⁺ ions at a rate of 1.5 mm/h. A method of co-doping the given material with a Ag acceptor impurity is proposed in order to increase the resistivity and reduce the optical losses in the CdSe:Cr²⁺ crystals caused by absorption at free charge carriers. Lasing in the mid-IR region (2.65–2.8 μm) is obtained in the as-grown CdSe:Cr²⁺ samples.

Keywords:

Bridgman method, chalcogenide laser, lasing

OCIS codes: 140.3070, 140.3390, 140.5960

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