УДК: 535.016, 535.15, 535.041.08

Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions

Grigoriev, L.V., Solomin, S.O., Polyakov, D.S., Veiko, V.P., Mikhailov, A.V.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Григорьев Л.В., Соломин С.О., Поляков Д.С., Вейко В.П., Михайлов А.В. Оптические и люминесцентные свойства лазерно-окисленного пористого кремния, легированного ионами эрбия и иттербия // Оптический журнал. 2016. Т. 83. № 7. С. 51–57.

Grigoriev L.V., Solomin S.O., Polyakov D.S., Veiko V.P., Mikhailov A.V. Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions [in Russian] // Opticheskii Zhurnal. 2016. V. 83. № 7. P. 51–57.

For citation (Journal of Optical Technology):

L. V. Grigor’ev, S. O. Solomin, D. S. Polyakov, V. P. Veĭko, and A. V. Mikhaĭlov, "Optical and luminescence properties of laser-oxidized porous silicon doped with erbium and ytterbium ions," Journal of Optical Technology. 83(7), 429-433 (2016). https://doi.org/10.1364/JOT.83.000429

Abstract:

This paper presents a new method of laser-stimulated oxidation of a porous silicon layer with pore sizes of 5–10 nm that uses the strong-absorption effect of radiation by a semiconductor. The results of a study of the optical properties of a thin film of laser-oxidized porous silicon of various morphologies, doped with erbium or ytterbium ions, are presented. The transmittance of the layer of interest in the wavelength range from 1.2 to 2.0 μm was at least 66%.

Keywords:

laser-oxidized porous silicon, photoluminescence, laser-stimulated oxidation, nanocomposite, erbium silicate, ytterbium silicate

Acknowledgements:

This work was carried out with the financial support of the Ministry of Education and Science of the Russian Federation (identifier PNIÉR: RFMEF1581X0006).

OCIS codes: 250.0250, 300.0300, 310.0310, 160.0160

References:

1. I. H. Ray, Y. Lefevre, S. A. Schulz, N. Vermeulen, and T. F. Krauss, “Scaling of Raman amplification in realistic slow-light photonic crystal waveguides,” Phys. Rev. B 84(3), 035306 (2011).
2. X. C. Liu, M. Myronov, A. Dobbie, R. J. Morris, and D. R. Leadley, “High-quality Ge/Si/Ge multiple quantum wells for photonic applications: grown by reduced pressure chemical vapour deposition and structural characteristics,” J. Phys. D 44(5), 055102 (2011).
3. L. A. Golovan, V. Yu. Timoshenko, and P. K. Kashkarov, “Optical properties of porous-system-based nanocomposites,” Phys. Usp. 50(6), 595–612 (2007) [Usp. Fiz. Nauk 177(6), 619–638 (2007)].
4. A. V. Mikhaı˘lov, L. V. Grigor’ev, and P. P. Konorov, “Selective absorption in thermally oxidized nanoporous silicon,” J. Opt. Technol. 79(2), 99–101 (2012) [Opt. Zh. 79(2), 54–58 (2012)].
5. X. J. Wang, T. Nakajima, H. Ishiki, and T. Kimura, “Fabrication and characterization of Er silicates on SiO2 /Si substrates,” Appl. Phys. Lett. 95, 040906 (2009).
6. S. Kuck, “Laser-related spectroscopy of ion-doped crystals for tunable solid-state lasers,” Appl. Phys. B 72, 515–562 (2001).
7. M. Stepikhova, L. Palmesthofer, W. Jantsch, H. J. von Bandeleben, and N. V. Gaponenko, “1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon,” Appl. Phys. Lett. 74, 537–539 (1999).
8. O. Polman, “Erbium-implanted thin-film photonic materials,” Appl. Phys. 82, 1–39 (1997).
9. O. Bisi, S. Ossicini, and L. Pavesi, “Porous silicon: a quantum sponge structure for silicon-based optoelectronics,” Surf. Sci. Rep. 38(1–3), 1–126 (2000).
10. S. M. Zharkiı˘, A. A. Karabutov, I. M. Pelivanov, N. M. Podymova, and V. Yu. Timoshenko, “Laser ultrasonic study of porous silicon layers,” Semiconductors 37(4), 468–472 (2003) [Fiz. Tekh. Poluprovodn. 37(4), 485–489 (2003)].
11. L. V. Grigor’ev and A. V. Mikhaı˘lov, “Forming a silicon nanocomposite by laser annealing in a strong oxidant medium,” J. Opt. Technol. 80(11), 714–716 (2013) [Opt. Zh. 82(11), 94–97 (2013)].
12. L. M. Sorokin, V. I. Sokolov, A. P. Burtsev, A. E. Kalmykov, and L. V. Grigor’ev, “Laser-induced modification of porous silicon,” Tech. Phys. Lett. 33(12), 1065–1068 (2007) [Pis’ma Zh. Tekh. Fiz. 33(24), 69–75 (2007)].
13. L. V. Grigor’ev and A. V. Mikhaı˘lov, “Photoluminescence in oxidized nanoporous silicon doped with erbium ions,” J. Opt. Technol. 82(2), 127–130 (2015) [Opt. Zh. 82(2), 90–96 (2015)].
14. I. A. Bufetov, S. L. Semenov, A. F. Kosolapov, M. A. Mel’kumov, and E. D. Dianov, “Ytterbium fibre laser with a heavily Yb 3+-doped glass fibre core,” Quantum Electron. 36(3), 189–191 (2006) [Kvant. Elektron. (Moscow) 36(3), 189–191 (2006)].
15. M. A. Mel’kumov, I. A. Bufetov, K. S. Kravtsov, E. D. Dianov, and A. V. Shubin, “Lasing parameters of ytterbium-doped fibres doped with P2 O5 and Al2 O3 ,” Quantum Electron. 34(9), 843–848 (2004) [Kvant. Elektron. (Moscow) 34(9), 843–848 (2004)].