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InGaAs/InAlAs avalanche photodetectors integrated on silicon-on-insulator waveguide circuits
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Publication in Journal of Optical Technology
Dongdong Yin, Xiaohong Yang, Tingting He, Qianqian Lv, Han Ye, Qin Han InGaAs/InAlAs avalanche photodetectors integrated on silicon-on-insulator waveguide circuits (Лавинные фотодетекторы на основе InGaAs/InAlAs, интегрированные с волноводными структурами «кремний на изоляторе») [на англ. яз.] // Оптический журнал. 2017. Т. 84. № 5. С. 80–85.
Dongdong Yin, Xiaohong Yang, Tingting He, Qianqian Lv, Han Ye, Qin Han InGaAs/InAlAs avalanche photodetectors integrated on silicon-on-insulator waveguide circuits (Лавинные фотодетекторы на основе InGaAs/InAlAs, интегрированные с волноводными структурами «кремний на изоляторе») [in English] // Opticheskii Zhurnal. 2017. V. 84. № 5. P. 80–85.
Dongdong Yin, Xiaohong Yang, Tingting He, Qianqian Lv, Han Ye, and Qin Han, "InGaAs/InAlAs avalanche photodetectors integrated on silicon-on-insulator waveguide circuits," Journal of Optical Technology. 84(5), 350-354 (2017). https://doi.org/10.1364/JOT.84.000350
We simulated an evanescently coupled InGaAs/InAlAs avalanche photodetector integrated on silicon-oninsulator waveguide circuits using benzocyclobutene as the bonding layer. A silicon fiber-grating coupler is adopted to couple light from the fiber to the Si waveguide and light can finally be absorbed in the absorption region. Simulations around improving the optical coupling efficiency with different device dimensions such as different benzocyclobutene bonding thicknesses, different InP layer parameters and different silicon waveguide widths were carried out. The simulation result shows a detection efficiency of 96.7% for 2 μm silicon waveguide device with a photodetector length of 40 μm which can get a gain-bandwidth product of 135 GHz at 1550 nm.
silicon-on-insulator, avalanche photodetector, evanescent wave, benzocyclobutene bonding
OCIS codes: 040.1345, 040.5160, 130.5990, 200.4650
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