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DOI: 10.17586/1023-5086-2019-86-02-55-61
УДК: 621.383.45, 621.793.09
Radially biased photoresistors with heteroepitaxial CdxHg1−xTe structure
Full text «Opticheskii Zhurnal»
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Publication in Journal of Optical Technology
Гусаров А.В., Филатов А.В., Сусов Е.В., Карпов В.В., Гиндин П.Д. Фоторезисторы с радиальным смещением из гетероэпитаксиальных структур CdxHg1–xTe // Оптический журнал. 2019. Т. 86. № 2. С. 55–61. http://doi.org/10.17586/1023-5086-2019-86-02-55-61
Gusarov A.V., Filatov A.V., Susov E.V., Karpov V.V., Gindin P.D. Radially biased photoresistors with heteroepitaxial CdxHg1−xTe structure [in Russian] // Opticheskii Zhurnal. 2019. V. 86. № 2. P. 55–61. http://doi.org/10.17586/1023-5086-2019-86-02-55-61
A. V. Gusarov, A. V. Filatov, E. V. Susov, V. V. Karpov, and P. D. Gindin, "Radially biased photoresistors with heteroepitaxial CdxHg1−xTe structure," Journal of Optical Technology. 86(2), 108-113 (2019). https://doi.org/10.1364/JOT.86.000108
We study the properties and parameters of compact photoresistor sensors with radial contacts made from CdxHg1−xTe (x≈0.212) heteroepitaxial structures with graded-base contacts. For a bias voltage corresponding to a voltage sensitivity of 1.5×105 V/W and a planar field of view of 14°, the maximum power output was 0.5 μW per element, while the minimum specific detection capability is 1.2×1011 cm⋅Hz1/2/W. The photoresistor design and resulting photoelectric parameters of the photoresistors enable us to produce focal-plane photoresistor arrays with pixel counts of the order of 106 and use multiplexers for image signal processing.
heteroepitaxial CdxHg1−xTe structures, photoresistor, charge-carrier exclusion
OCIS codes: 230.5160, 040.3060, 160.6840
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