Using the noise-equivalent temperature difference to compare superlarge photoreceivers based on quantum-well multilayer structures

Demiyanenko, M.A., Kozlov, A.I., Novoselov, A.R., Ovsyuk, V.N.

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For Russian citation (Opticheskii Zhurnal):

Козлов А.И., Новоселов А.Р., Демьяненко М.А., Овсюк В.Н. Применение эквивалентной шуму разности температур для сравнения фотоприемников сверхвысокой размерности на основе многослойных структур с квантовыми ямами // Оптический журнал. 2020. Т. 87. № 1. С. 37–44. http://doi.org/10.17586/1023-5086-2020-87-01-37-44

Kozlov A.I., Novoselov A.R., Demiyanenko M.A., Ovsyuk V.N. Using the noise-equivalent temperature difference to compare superlarge photoreceivers based on quantum-well multilayer structures [in Russian] // Opticheskii Zhurnal. 2020. V. 87. № 1. P. 37–44. http://doi.org/10.17586/1023-5086-2020-87-01-37-44

For citation (Journal of Optical Technology):

A. I. Kozlov, A. R. Novoselov, M. A. Dem’yanenko, and V. N. Ovsyuk, "Using the noise-equivalent temperature difference to compare superlarge photoreceivers based on quantum-well multilayer structures," Journal of Optical Technology. 87(1), 29-35 (2020). https://doi.org/10.1364/JOT.87.000029

Abstract:

A method has been developed for analyzing the temperature resolution of far-IR and mid-IR photoreceivers. The features of creating silicon multiplexers for such photoreceivers are discussed. The noise-equivalent temperature difference is analyzed for IR photoreceivers based on silicon multiplexers with framewise accumulation from photodetectors based on quantum-well multilayer structures. The silicon multiplexers thus developed are compared in order to use photosensitive chips, including those with increased dark currents, to create IR photoreceivers with temperature resolution at the response level of similar photoreceivers from leading companies. The structural–technological principles of the creation of mosaic photoreceivers are developed for the case of superhigh size. The technological level thus achieved is discussed for high-precision microassembly of submodule chips into mosaic photoreceivers. Methods are proposed for forming the multispectral photosensitivity response of the mosaic photoreceivers. A comparative analysis is carried out of the size of the “blind zone” of different defining materials.

Keywords:

IR superlarge mosaic photoreceiver, silicon multiplexer, supergratings, photoreceivers based on quantum-well multilayer structures

Acknowledgements:

The authors are grateful to Academicians of the Russian Academy of Sciences A. V. Latyshev and A. L. Aseev for help and discussion of the studies presented here, to Candidate of Technical Sciences V. N. Fedorinin for discussing the implementation and application of SMs based at IFP SO RAN, to doctors of Physical-Mathematical Sciences Yu. G. Sidorov and M. V. Yakushev, to Candidate of Physical-Mathematical Sciences V. V. Vasil’ev for discussing the properties of HgCdTe, to A. P. Savchenko for discussing the parameters of QWMSs and SGs, to P. R. Mashevich and A. A. Romanov for active help in fabricating SMs at AO Angstrem, and to V. N. Gashtol’d and N. V. Sushcheva for support and help in fabricating SMs at AO NPO Vostok.

OCIS codes: 040.3060, 110.3080, 130.5990

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