Photoresistors from heteroepitaxial structures n-CdxHg1-xTe with exclusion of charge carriers within the 3–5 µm spectral range

Filatov, A.V., Susov, E.V., Gusarov, A.V., Karpov, V.V.

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Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Филатов А.В., Сусов Е.В., Гусаров А.В., Карпов В.В. Фоторезисторы с эксклюзией носителей заряда для спектрального диапазона 3–5 мкм из гетероэпитаксиальных структур n – Cd_xHg_1-xTe// Оптический журнал. 2020. Т. 87. № 12. С. 103 –110. http://doi.org/10.17586/1023-5086-2020-87-12-103-110

For citation (Journal of Optical Technology):

A. V. Filatov, E. V. Susov, A. V. Gusarov, and V. V. Karpov, "Photoresistors from heteroepitaxial structures n-Cd_xHg_1-xTe with exclusion of charge carriers within the 3–5 µm spectral range," Journal of Optical Technology. 87(12), 774-779 (2020). https://doi.org/10.1364/JOT.87.000774

Abstract:

The properties of photoresistors with photosensitive areas of 0.05mm×0.05mm and 0.5mm×0.5mm made of heteroepitaxial structures n-CdxHg1−xTe were investigated within the spectral range of 3–5 µm using indium contacts at a temperature of 80 K. The dependence of the lifetime and concentration of the charge carriers inside the pixels on the bias voltage was determined within a wide range of exposure to background radiation. In photoresistors with a pixel size of 0.05mm×0.05mm, a nonequilibrium mode of operation with the exclusion of minority charge carriers can be realized. The electron concentration in this mode decreases to 1×1013cm−3. Photoresistors made of epitaxial structures n-CdxHg1−xTe (x≈0.305) in exclusion mode at 80 K have a voltage sensitivity of the order of 107V/W and a specific detectivity of approximately 1.3×1012cm⋅Hz1/2/W.

Keywords:

heteroepitaxial structures of cadmium-mercury-tellurium, photoresistor, exclusion of charge carriers

OCIS codes: 230.5160, 040.3060, 160.6840

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