Spectral and kinetic properties of radiation of self-assembled Ge(Si) nanoislands in two-dimensional photonic crystals with different hole depths

Yablonskiy A.N., Yurasov D.V., Zakharov V.E., Peretokin A.V., Stepikhova M.V., Shaleev M.V., Shengurov D.V., Rodyakina E.E., Smagina Z.V., Novikov A.V.

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For Russian citation (Opticheskii Zhurnal):

Яблонский А.Н., Юрасов Д.В., Захаров В.Е., Перетокин А.В., Степихова М.В., Шалеев М.В., Шенгуров Д.В., Родякина Е.Е., Смагина Ж.В., Новиков А.В. Спектро-кинетические характеристики излучения самоформирующихся Ge(Si)-наноостровков в двумерных фотонных кристаллах с различной глубиной отверстий // Оптический журнал. 2024. Т. 91. № 10. С. 50–59. http://doi.org/10.17586/1023-5086-2024-91-10-50-59

Yablonskiy A.N., Yurasov D. V., Zakharov V E., Peretokin A.V., Stepikhova M. V., Shaleev M.V., Shengurov D. V., Rodyakina E.E., Smagina Z.V., Novikov A. V. Spectral and kinetic properties of radiation of self-assembled Ge(Si) nanoislands in two-dimensional photonic crystals with different hole depths [in Russian] // Opticheskii Zhurnal. 2024. V. 91. № 10. P. 50–59. http://doi.org/10.17586/1023-5086-2024-91-10-50-59

For citation (Journal of Optical Technology):

Abstract:

Subject of study. SiGe heterostructures with self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals. Aim of study. Determination the dependence of the spectral and temporal characteristics of the radiation of structures with Ge(Si) islands in two-dimensional photonic crystals on the depth of the holes forming the photonic crystal. Determination of the characteristic decay times of the luminescence of islands in photonic crystals and the main mechanisms that determine their dependence on the depth of etching of the holes of photonic crystals. Method. The structures under study were obtained using the methods of molecular beam epitaxy electron beam lithography and plasma-chemical etching. The study of the optical properties of the obtained structures was carried out by microphotoluminescence spectroscopy with high spectral (0.5 nm) and temporal (50 ps) resolution. Main results. The dependences of the intensity, spectral shape, and characteristic decay times of photoluminescence of self-assembled Ge(Si) islands in two-dimensional photonic crystals with a hexagonal lattice on the etching depth of the photonic crystal holes have been determined. A monotonic decrease in the characteristic decay time of the luminescence of islands in photonic crystals at room temperature with increasing hole depth from 9 ns for the initial structure without photonic crystals to 0.6 ns for the sample with holes etched to the entire depth of the grown structure (335 nm), has been observed, which is associated with an increase in nonradiative recombination of charge carriers at the boundaries of the holes. The optimal ratio of the hole depth to the thickness of the active region of the structure has been determined, which makes it possible to obtain a maximum increase in the luminescence intensity of Ge(Si) islands in two-dimensional photonic crystals compared to planar structures without photonic crystals. Practical significance. The obtained results can be important for the development of efficient light-sources of near-infrared range for silicon integrated optoelectronics.

Keywords:

SiGe heterostructures, Ge(Si) islands, two-dimensional photonic crystals, microphotoluminescence spectroscopy, time-resolved luminescence spectroscopy, non-radiative recombination

OCIS codes: 310.6628, 300.6470, 050.5298, 250.5230

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