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DOI: 10.17586/1023-5086-2024-91-02-34-39
УДК: 621.315.592.2
Influence of formation conditions and annealing on the parameters of Pt/InAlAs Schottky barriers
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Publication in Journal of Optical Technology
Гензе И.Ю., Аксенов М.С, Парамонова М.А., Дмитриев Д.В., Журавлёв К.С. Влияние условий формирования и отжига на параметры Pt/InAlAs барьеров Шоттки // Оптический журнал. 2024. Т. 91. № 2. С. 34–39. http://doi.org/10.17586/1023-5086-2024-91-02-34-39
Genze I.Yu., Aksenov M.S., Paramonova M.A., Dmitriev D.V., Zhuravlev K.S. Influence of formation conditions and annealing on the parameters of Pt/InAlAs Schottky barriers [In Russian] // Opticheskii Zhurnal. 2024. V. 91. № 2. P. 34–39. http://doi.org/10.17586/1023-5086-2024-91-02-34-39
Ilya Yu. Genze, Maxim S. Aksenov, Maria A. Paramonova, Dmitry V. Dmitriev, and Konstantin S. Zhuravlev, "Influence of formation conditions and annealing on the parameters of Pt/InAlAs Schottky barriers," Journal of Optical Technology. 91(2), 83-85 (2024). https://doi.org/10.1364/JOT.91.000083
Subject of study. In this work, Au/Pt/Ti/Pt/i(n)-In0.52Al0.48As(001) mesa Schottky barriers formed after ion and liquid treatment of the InAlAs surface, followed by annealing at temperatures of 300, 350 and 400 °C durations up to 16 min were studied. Aim of study is to establish the effect of preliminary ion treatment of the InAlAs surface and annealing on the parameters (barrier height and ideality factor) of Pt/n-InAlAs Schottky barriers. Method. The parameters were calculated by analyzing the current-voltage characteristics within the framework of thermionic emission theory. Main results. The dependences of the barrier height and ideality factor on annealing time were determined. It has been shown that the use of ion etching in combination with annealing makes it possible to obtain a higher barrier height (0.83 eV) and a lower ideality factor (1.08) compared to using only liquid surface treatment. Practical significance. The results obtained can be useful for improving the technology for the formation of Schottky barriers based on InAlAs.
Schottky barrier, InAlAs, Pt, ion etching, current-voltage characteristic, thermo-electronic emission
OCIS codes: 160.6000, 160.3900, 310.1860
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