Influence of formation conditions and annealing on the parameters of Pt/InAlAs Schottky barriers

Genze I.Y., Aksenov M.S., Paramonova M.A., Dmitriev D.V., Zhuravlev K.S.

For Russian citation (Opticheskii Zhurnal):

Гензе И.Ю., Аксенов М.С, Парамонова М.А., Дмитриев Д.В., Журавлёв К.С. Влияние условий формирования и отжига на параметры Pt/InAlAs барьеров Шоттки // Оптический журнал. 2024. Т. 91. № 2. С. 34–39. http://doi.org/10.17586/1023-5086-2024-91-02-34-39

Genze I.Yu., Aksenov M.S., Paramonova M.A., Dmitriev D.V., Zhuravlev K.S. Influence of formation conditions and annealing on the parameters of Pt/InAlAs Schottky barriers [In Russian] // Opticheskii Zhurnal. 2024. V. 91. № 2. P. 34–39. http://doi.org/10.17586/1023-5086-2024-91-02-34-39

For citation (Journal of Optical Technology):

Abstract:

Subject of study. In this work, Au/Pt/Ti/Pt/i(n)-In0.52Al0.48As(001) mesa Schottky barriers formed after ion and liquid treatment of the InAlAs surface, followed by annealing at temperatures of 300, 350 and 400 °C durations up to 16 min were studied. Aim of study is to establish the effect of preliminary ion treatment of the InAlAs surface and annealing on the parameters (barrier height and ideality factor) of Pt/n-InAlAs Schottky barriers. Method. The parameters were calculated by analyzing the current-voltage characteristics within the framework of thermionic emission theory. Main results. The dependences of the barrier height and ideality factor on annealing time were determined. It has been shown that the use of ion etching in combination with annealing makes it possible to obtain a higher barrier height (0.83 eV) and a lower ideality factor (1.08) compared to using only liquid surface treatment. Practical significance. The results obtained can be useful for improving the technology for the formation of Schottky barriers based on InAlAs.

Keywords:

Schottky barrier, InAlAs, Pt, ion etching, current-voltage characteristic, thermo-electronic emission

OCIS codes: 160.6000, 160.3900, 310.1860

References:

1. Muhamd R., Yahia I.S., Zahran H.Y. Phase separation induced Schottky barrier height change in InAlAs/InP heterostructure-based HEMT devices // ECS J. Solid State Sci. Technol. 2022. V. 11. № 7. P. 075001. https://doi.org/10.1149/2162-8777/ac7dc4

2. Chakraborty S., Kim T.-W. Comprehensive Schottky barrier height behavior and reliability instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN high-electron-mobility transistors // Micromachines. 2022. V. 13. № 1. P. 84. https://doi.org/10.3390/mi13010084

3. Ran J., He R., Wang L., Liu B., Ji X., Sun J., Wang J., Li J., Wei T. Improved barrier homogeneity in Pt/Al_0.75Ga_0.25N Schottky barrier diodes by graphene in-terlayer // J. Phys. D: Appl. Phys. 2022. V. 55. № 30. P. 304001. https://doi.org/10.1088/1361-6463/ac6c5f

4. Efeoğlu H., Turut A. Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes // J. Vac. Sci. Technol. B 2023. V. 41. P. 022207. https://doi.org/10.1116/6.0002411

5. Chizh A.L., Mikitchuk K.B., Zhuravlev K.S., Dmitriev D.V., Toropov A.I., Valisheva N.A., Aksenov M.S., Gilinsky A.M., Chistokhin I.B. High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines // Tech. Phys. Lett. 2019. V. 45. № 7. P. 739–741. https://doi.org/10.1134/S1063785019070204

6. Aksenov M.S., Genze I.Y., Chistokhin I.B., Zakirov E.R., Dmitriev D.V., Zhuravlev K.S., Gulyashov O.V., Teresh-chenko O.E. Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts // Surf. Interfaces. 2023. V. 39. P. 102920. https://doi.org/10.1016/j.surfin.2023.102920

7. Fricke A., Stareev G., Kummetz T., Sowada D., Mahnss J., Kowalsky W., Ebeling K. 1.09-eV Schottky barrier height of nearly ideal Pt/Au contacts directly deposited on n- and p⁺n- Al_0.48In_0.52As layers // Appl. Phys. Lett. 1994. T. 65. P. 755–757. https://doi.org/10.1063/1.112221

8. Mahajan A., Arafa M., Fay P., Caneau C., Adesida I. Enhancement-mode High Electron Mobility Transistors (E-HEMT’s) Lattice-Matched to InP // IEEE. 1998. Т. 45. №. 12. P. 2422-2429. https://doi.org/10.1109/16.735718

9. Harada N., Kuroda S., Hikosaka K. Pt-based gate en-hancement-mode InAlAs/InGaAs HEMT’s for large-scale integration // Proc. 3rd Int. Conf. InP and Related Materials. 1991. P. 377–380. https://doi.org/10.1109/ICIPRM.1991.147394

10. Sadwick L.P., Kim C.W., Tan K.L., Streit D.C. Schottky barrier heights of n-type and p-type Al_0.48In_0.52As // IEEE. 1991. T. 12. P. 626–628. https://doi.org/10.1109/55.119219

11. Gao W., Berger P.R., Hunsperger R.G., Zydzik G., Rhodes W.W., O’Bryan H.M., Sivco D., Cho A.Y. Transparent and opaque Schottky contacts on undoped In_0.52Al_0.48As grown by molecular beam epitaxy // Appl. Phys. Lett. 1995. V. 66. № 25. P. 3471–3473. https://doi.org/10.1063/1.113767

12. Kim S., Adesida I., Hwang H. Measurements of thermally induced nanometer-scale diffusion depth of Pt/Ti/Pt/Au gate metallization on InAlAs/InGaAs high-electron-mobility transistors // Appl. Phys. Lett. 2005. T. 87. P. 232102. https://doi.org/10.1063/1.2137687

13. Amano M., Fujita S., Hosoi S., Noda T., Sasaki A., Ashizawa Y. InAlAs/InGaAs HEMT using InGaP Schottky contact layer // Seventh International Conference on Indium Phosphide and Related Materials. IEEE. 1995. P. 416–419. https://doi.org/10.1109/ICIPRM.1995.522168

14. Chuang H.F., Lee C.P., Tsai C.M., Liu D.C., Tsang J.S., Fan J.C. Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies // J. Appl. Phys. 1998. V. 83. №. 1. P. 366–371. https://doi.org/10.1063/1.366692

15. Wang L., Zhao W., Adesida I. Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs/InGaAs high electron mobility transistors // Appl. Phys. Lett. 2006. V. 89. № 21. P. 211910. https://doi.org/10.1063/1.2393005

16. Rhoderick E.H., Williams R.H. Metal-semiconductor contacts. Oxford: Clarendon press, 1988. P. 129.

17. Wang L., Adesida I. Schottky barrier characteristics and interfacial reactions of Ti on n-In_0.52Al_0.48As // Appl. Phys. Lett. 2007. V. 91. P. 022110. https://doi.org/10.1063/1.2756313

18. Fontaine C., Okumura T., Tu K. N. Interfacial reaction and Schottky barrier between Pt and GaAs // J. Appl. Phys. 1983. V. 54. P. 1404. https://doi.org/10.1063/1.332165