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DOI: 10.17586/1023-5086-2024-91-02-40-49
УДК: 621.315.592.3
Zn doping of InAlAs and InP epitaxial layers from a planar Zn3P2 source
Петрушков М.О., Аксенов М.С., Богомолов Д.Б., Емельянов Е.А., Протасов Д.Ю., Путято М.А., Чистохин И.Б., Преображенский В.В., Гилинский А.М., Воропаев К.О. Легирование Zn эпитаксиальных слоёв InAlAs и InP из планарного источника Zn3P2 // Оптический журнал. 2024. Т. 91. № 2. С. 40–49. http://doi.org/10.17586/1023-5086-2024-91-02-40-49
Petrushkov M.О., Aksenov M.S., Bogomolov D.B., Emelyanov E.A., Protasov D.Y., Putyato M.A., Chistokhin I.B., Preobrazhenskii V.V., Gilinsky A.M., Voropaev K.O. Zn doping of InAlAs and InP epitaxial layers from a planar Zn3P2 source [In Russian] // Opticheskii Zhurnal. 2024. V. 91. № 2. P. 40–49. http://doi.org/10.17586/1023-5086-2024-91-02-40-49
The subject of study is epitaxial layers of InAlAs and InP after Zn diffusion. The aim of study is the development of method of the controlled Zn doping of InAlAs and InP epitaxial layers. Method. The doping was carried out through a narrow gap using a solid-state source based on Zn3P2 and rapid thermal annealing. The depth profiles of Zn concentration distribution in InAlAs and InP were determined using electrochemical C-V profiling. Also the dopant diffusion depth was determined by scanning electron microscopy image analysis. Main results. It has been established that at T = 500 °C the time dependence of the Zn doping depth in InP and InAlAs layers is in good agreement with the diffusion (square root) dependence. Moreover, from the calculations obtained it follows that the effective diffusion coefficient in InP is 2.5 times higher than in InAlAs. The maximum achievable concentrations of electrically active dopant in the InP and InAlAs layers are (6–7)х1017 cm–3 and (3–4)х1018 cm–3, respectively. It has been shown that the presence of a thin (100 nm) InAlAs layer in the InP epitaxial layer can significantly slow down the diffusion of Zn. Practical significance. The results on the diffusion of Zn in InAlAs and InP obtained in this work will serve as the basis for the development and manufacture of prototypes of planar avalanche photodiode devices with reduced excess noise and a wide dynamic range of sensitivity.
Zn, diffusion, InAlAs, InP, avalanche photodiode
Acknowledgements:OCIS codes: 250.1345, 040.1345
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