Zn doping of InAlAs and InP epitaxial layers from a planar Zn3P2 source

Petrushkov M.O., Aksenov M.S., Bogomolov D.B., Emelyanov E.A., Protasov D.Y., Putyato, M.A., Chistokhin I.B., Preobrazhenskiy, V.V., Gilinsky A.M., Voropaev, K.O.

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Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Петрушков М.О., Аксенов М.С., Богомолов Д.Б., Емельянов Е.А., Протасов Д.Ю., Путято М.А., Чистохин И.Б., Преображенский В.В., Гилинский А.М., Воропаев К.О. Легирование Zn эпитаксиальных слоёв InAlAs и InP из планарного источника Zn₃P₂ // Оптический журнал. 2024. Т. 91. № 2. С. 40–49. http://doi.org/10.17586/1023-5086-2024-91-02-40-49

Petrushkov M.О., Aksenov M.S., Bogomolov D.B., Emelyanov E.A., Protasov D.Y., Putyato M.A., Chistokhin I.B., Preobrazhenskii V.V., Gilinsky A.M., Voropaev K.O. Zn doping of InAlAs and InP epitaxial layers from a planar Zn₃P₂ source [In Russian] // Opticheskii Zhurnal. 2024. V. 91. № 2. P. 40–49. http://doi.org/10.17586/1023-5086-2024-91-02-40-49

For citation (Journal of Optical Technology):

Mikhail O. Petrushkov, Maxim S. Aksenov, Dmitry B. Bogomolov, Eugeniy A. Emelyanov, Dmitry Y. Protasov, Mikhail A. Putyato, Igor B. Chistokhin, Valerii V. Preobrazhenskii, Alexander M. Gilinsky, and Kirill O. Voropaev, "Zn doping of InAlAs and InP epitaxial layers from a planar Zn₃P₂ source," Journal of Optical Technology. 91(2), 86-90 (2024). https://doi.org/10.1364/JOT.91.000086

Abstract:

The subject of study is epitaxial layers of InAlAs and InP after Zn diffusion. The aim of study is the development of method of the controlled Zn doping of InAlAs and InP epitaxial layers. Method. The doping was carried out through a narrow gap using a solid-state source based on Zn₃P₂ and rapid thermal annealing. The depth profiles of Zn concentration distribution in InAlAs and InP were determined using electrochemical C-V profiling. Also the dopant diffusion depth was determined by scanning electron microscopy image analysis. Main results. It has been established that at T = 500 °C the time dependence of the Zn doping depth in InP and InAlAs layers is in good agreement with the diffusion (square root) dependence. Moreover, from the calculations obtained it follows that the effective diffusion coefficient in InP is 2.5 times higher than in InAlAs. The maximum achievable concentrations of electrically active dopant in the InP and InAlAs layers are (6–7)х10¹⁷ cm^–3 and (3–4)х10¹⁸ cm^–3, respectively. It has been shown that the presence of a thin (100 nm) InAlAs layer in the InP epitaxial layer can significantly slow down the diffusion of Zn. Practical significance. The results on the diffusion of Zn in InAlAs and InP obtained in this work will serve as the basis for the development and manufacture of prototypes of planar avalanche photodiode devices with reduced excess noise and a wide dynamic range of sensitivity.

Keywords:

Zn, diffusion, InAlAs, InP, avalanche photodiode

Acknowledgements:

the authors thank Russian Railways for the financial support within the framework of this work. The studies were carried out using the equipment of the Center for Shared Use of the ISP SB RAS “Nanostructures”. The authors express their gratitude to T.A. Gavrilova and Yu.A. Zhivodkov for carrying out measurements using the SEM method

OCIS codes: 250.1345, 040.1345

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