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DOI: 10.17586/1023-5086-2024-91-06-99-107
УДК: 539.27
Effect of changing the growth mechanism on the synthesis of germanium two-dimensional layers and quantum dots on silicon
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Кукенов О.И., Дирко В.В., Соколов А.С., Лозовой К.А., Швалева К.И., Коханенко А.П., Войцеховский А.В. Влияние смены механизма роста на синтез двумерных слоёв и квантовых точек германия на кремнии // Оптический журнал. 2024. Т. 91. № 6. С. 99–107. http://doi.org/10.17586/1023-5086-2024-91-06-99-107
Kukenov O.I., Dirko V.V., Sokolov A.S., Lozovoy K.A., Shvaleva O.I., Kokhanenko A.P., Voitsekhovskii A.V. Effect of changing the growth mechanism on the synthesis of germanium two-dimensional layers and quantum dots on silicon [in Russian] // Opticheskii Zhurnal. 2024. V. 91. № 6. P. 99–107. http://doi.org/10.17586/1023-5086-2023-90-05-99-107
Subject of study. The work studied the formation of germanium quantum dots on a silicon with (100) crystallographic orientation under different growth regimes. Aim of study. The work is devoted to conducting experimental studies of the influence of growth mechanisms on the formation of germanium layers and quantum dots on a silicon (100) substrate for the production of optical elements based on silicon-germanium nanostructures. Methods. After cleaning the Si substrate pre-epitaxially, germanium is synthesized on Si(100) through molecular beam epitaxy. The surface morphology is analyzed using reflection high-energy electron diffraction during synthesis and scanning electron microscopy after deposition. Main results. The work determines the temperature ranges at which the Si/Si(100) growth occurs due to the nucleation of islands, due to the movement of steps, and in combination. The effect of changing growth mechanisms on the size and density of Ge quantum dots on Si(100) is shown. Practical significance. The research results provide insight into the influence of growth mechanisms on the sizes of formed germanium quantum dots on silicon, which will make it possible to create nanophotonics and nanoelectronics elements with strictly specified parameters.
quantum dots, 2D layers, molecular beam epitaxy, reflection high-energy electron diffraction, germanium, silicon
Acknowledgements:OCIS codes: 230.5590, 250.0040, 180.5810
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