Maximum wall-plug efficiency of 1300 nm single-frequency vertical-cavity surface emitting lasers

Kopytov, P.E., Babichev, A.V., Karachinsky, L.Y., Novikov, I.I., Andryushkin, V.V., Gladyshev, A.G., Papylev D.S., Voropaev, K.O., Blokhin, S.A., Kovach, Y.N., Tian Sicong, Bimberg Dieter, Egorov A.Y.

For Russian citation (Opticheskii Zhurnal):

Копытов П.Е., Бабичев А.В., Карачинский Л.Я., Новиков И.И., Андрюшкин В.В., Гладышев А.Г., Папылев Д.С., Воропаев К.О., Блохин С.А., Ковач Я.Н., Тиэн С.-С., Бимберг Д., Егоров А.Ю. Максимальный КПД одночастотных вертикально-излучающих лазеров, излучающих на длине волн вблизи 1300 нм // Оптический журнал. 2025. Т. 92. № 12. С. 12–20. http://doi.org/10.17586/1023-5086-2025-92-12-12-20

Kopytov P.E., Babichev A.V., Karachinsky L.Ya., Novikov I.I., Andryushkin V.V., Gladyshev A.G., Papylev D.S., Voropaev K.O., Blokhin S.A., Kovach Ya.N., Tian S.-C., Bimberg D., Egorov A.Yu. Maximum wall-plug efficiency of 1300 nm single-frequency vertical-cavity surface emitting lasers [in Russian] // Opticheskii Zhurnal. 2025. V. 92. № 12. P. 12–20. http://doi.org/10.17586/1023-5086-2025-92-12-12-20

For citation (Journal of Optical Technology):

Abstract:

Scope of research. 1300 nm single-frequency vertical-cavity surface-emitting lasers, fabricated using a combination of wafer fusion technique and molecular beam epitaxy. The purpose of the work is to define tunnel junction mesa diameter of 1300 nm single-frequency vertical-cavity surfaceemitting that provides maximum wall-plug efficiency at temperatures from 20 to 100 °C. Method. Vertical-cavity surface-emitting laser heterostructures were fabricated using the wafer fusion of two distributed Bragg reflector heterostructures and an active region heterostructure with buried tunnel junction. Semiconductor heterostructures, including GaAs/AlGaAs distributed Bragg reflector heterostructures grown on GaAs substrates, and an active region heterostructure with an InGaAs/InAlAs/InP buried tunnel junction on an InP substrate, were fabricated using molecular beam epitaxy. Main results. It has been determined that maximum wall-plug efficiency of 1300 nm singlefrequency vertical-cavity surface-emitting lasers fabricated using a combination of wafer fusion technique and molecular beam epitaxy can be achieved for lasers with a 6 μm buried tunnel junction mesa diameter and it varies from 30% at a temperature of 20 °C to 7% at a temperature of 100 °C. Practical significance. When designing laser arrays based on single-frequency long-wavelength vertical-cavity surface-emitting lasers, it is essential to utilize lasers with maximum efficiency to minimize heat generation from the array. Analysis of the obtained results leads to the conclusion that vertical-cavity surface-emitting laser diodes with a buried tunnel junction diameter of 6 μm tends to be the optimal choice for this application.

Keywords:

VCSEL, wafer-fusion, molecular beam epitaxy, wall-plug efficiency, energy-efficiency, buried tunnel junction

Acknowledgements:

the work of the authors from ITMO University on the analysis of static performance of the lasers was supported by the Ministry of Science and Higher Education of the Russian Federation (State Assignment No. FSER-2025-0025)

OCIS codes: 140.5960, 250.5960, 140.7260, 250.7260, 160.6000, 060.4510

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