The peculiarities of boron concentration determination in doped diamond structures by Fourier transform infrared spectroscopy

Solomnikova A.V., Telitsyn N.S., Klepikov I.V., Tikhomirova, N.S., Panov M.F., Zubkov V.I., Solomonov A.V.

For Russian citation (Opticheskii Zhurnal):

Соломникова А.В., Телицын Н.С., Клепиков И.В., Панов М.Ф., Зубков В.И., Соломонов А.В. Особенности измерения концентрации бора в легированных алмазных структурах методом фурье-спектроскопии в инфракрасной области спектра // Оптический журнал. 2026. Т. 93. № 1. С. 23–33. http://doi.org/10.17586/1023-5086-2026-93-01-23-33

Solomnikova A.V., Telitsyn N.S., Klepikov I.V., Panov M.F., Zubkov V.I., Solomonov A.V. The peculiarities of boron concentration determination in doped diamond structures by Fourier transform infrared spectroscopy [in Russian] // Opticheskii Zhurnal. 2026. V. 93. № 1. P. 23–33. http://doi.org/10.17586/1023-5086-2026-93-01-23-33

For citation (Journal of Optical Technology):

Abstract:

Study Subject. Single-crystal diamond plates and homoepitaxial diamond structures doped with boron. Purpose of the work. Development of correct method determination of the concentration of uncompensated boron impurity in homogeneously doped homoepitaxial diamond layers by infrared absorption spectra. Method. Examination of diamond structures using Fourier transform infrared spectroscopy. Main results. A detailed analysis of the correctness of Fourier transform infrared spectroscopy for the boron impurity concentration in diamond for a wide doping range has been carried out. A two-stage technique for assessment of concentration of uncompensated boron impurity in homoepitaxial layers is proposed. At the first stage, the thickness of the epitaxial layer is calculated from the reflectance spectrum, and at the second stage, the optical density spectra are analyzed with a separate consideration of the lattice absorption region and the part of the spectrum responsible for absorption by boron atoms. The developed software was used for accurate determination of boron concentration in bulk samples and in epitaxial diamond layers. Practical significance. The proposed method for concentration determination in boron-doped epitaxial diamond layers makes it possible to precisely determine the concentration of impurity in complex homoepitaxial diamond structures, which are the basis for photonic, opto- and microelectronic devices. The developed software is suitable for implementation in laboratory research and technological process for primary nondestructive evaluation of impurity concentration in synthesized diamond single crystals.

Keywords:

single-crystal diamond, Fourier transform infrared spectroscopy, boron doping, optical absorption

Acknowledgements:

the study was done with a support of the state assignment for Saint Petersburg Electrotechnical University “LETI” (Theme № FSEE-2025-0007).

OCIS codes: 160.4670, 300.6340, 160.6000

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