Efficient electrooptic modulator for a laser beam reflected from the p–n junction of a germanium transistor

Савин Е.З. Эффективный электрооптический модулятор для лазерного луча, отраженного от p-n перехода германиевого транзистора // Оптический журнал. 2009. Т. 76. № 7. С. 77–78.

Savin E.Z. Efficient electrooptic modulator for a laser beam reflected from the p–n junction of a germanium transistor [in Russian] // Opticheskii Zhurnal. 2009. V. 76. № 7. P. 77–78.

E. Z. Savin, "Efficient electrooptic modulator for a laser beam reflected from the p–n junction of a germanium transistor," Journal of Optical Technology. 76 (7), 435-435 (2009). https://doi.org/10.1364/JOT.76.000435

This paper presents the response of an electrooptic modulator in the tonal region of frequencies for radiation reflected from the p-n junction of a germanium transistor that operates in the amplification regime. The modulator can be effectively used in fiber-optic communication, optical devices for quantum electronics, and devices for the recording, storage, and processing of optical information.