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ISSN: 1023-5086

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ISSN: 1023-5086

Scientific and technical

Opticheskii Zhurnal

A full-text English translation of the journal is published by Optica Publishing Group under the title “Journal of Optical Technology”

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УДК: 535.376/379, 543.7

Luminescence study of neodymium-doped yttrium aluminates

For Russian citation (Opticheskii Zhurnal):

Осипов В.В., Соломонов В.И., Спирина А.В. Люминесцентное исследование алюминатов иттрия, легированных неодимом // Оптический журнал. 2011. Т. 78. № 6. С. 81–87.

 

Osipov V.V., Solomonov V.I., Spirina A.V. Luminescence study of neodymium-doped yttrium aluminates [in Russian] // Opticheskii Zhurnal. 2011. V. 78. № 6. P. 81–87.

For citation (Journal of Optical Technology):

V. V. Osipov, V. I. Solomonov, and A. V. Spirina, "Luminescence study of neodymium-doped yttrium aluminates," Journal of Optical Technology. 78(6), 408-412 (2011). https://doi.org/10.1364/JOT.78.000408

Abstract:

This paper presents the results of a study of the pulsed cathodoluminescence of samples of neodymium-doped yttrium aluminates. It is found that the d–f emission bands of the Nd3+ ion dominate the spectrum of yttrium aluminum garnet in the visible region. The relative intensities and widths of the d–f bands vary as the crystal structure changes, and new luminescence bands appear. The luminescence bands of Nd3+ in the yttrium aluminum garnet and orthorhombic yttrium monoaluminate structures are identified. It is proposed to use two regions of the emission bands of Nd3+ in yttrium aluminum garnet as analytical bands to determine the concentration of the cubic phase: those at λ1=350–500 nm and λ2=501–650 nm.

Keywords:

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Acknowledgements:
The authors are thankful to Shestakov A.V. for granted crystalls, to Medvedev A.I. - for conducting the X-ray phase analysis, to Moskalenko N.I. - for conducting the element analysis of samples. The research was conducted as part of program of RAS and Ural Branch of RAS Presidium "New optical materials" and program of Ural Branch and Siberian Branch of RAS "The research of luminescent and lasing properties og high enegry-gap semiconductors and doped dielectrics". 

OCIS codes: 160.4670, 300.6280, 320.2250

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