УДК: 53.082.53: 544.023.2

Parametrization of the Forouhi–Bloomer–Lorentz model for Ta2O5 films in the fundamental-absorption region

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Вольпян О.Д., Обод Ю.А., Яковлев П.П. Параметризация модели Фороухи–Блумера–Лорентца для пленок Ta₂O₅ в области фундаментального поглощения // Оптический журнал. 2012. Т. 79. № 7. С. 3–9.

Vol’pyan O. D., Obod Yu. A., Yakovlev P. P. Parametrization of the Forouhi–Bloomer–Lorentz model for Ta₂O₅ films in the fundamental-absorption region [in Russian] // Opticheskii Zhurnal. 2012. V. 79. № 7. P. 3–9.

For citation (Journal of Optical Technology):

O. D. Vol’pyan, Yu. A. Obod, and P. P. Yakovlev, "Parametrization of the Forouhi–Bloomer–Lorentz model for Ta<sub>2</sub>O<sub>5</sub> films in the fundamental-absorption region," Journal of Optical Technology. 79(7), 385-389 (2012). https://doi.org/10.1364/JOT.79.000385

Abstract:

The complex optical and dielectric functions of the energy of an electromagnetic wave are calculated for a film of tantalum (V) oxide in the short-wavelength region, including thefundamental-absorption region. An additive combination of the Forouhi–Bloomer and Lorentz models is constructed to compute these functions. Versions of the Forouhi–Bloomer model with a dipole-transition matrix element that is independent of the wave energy are considered, along with a modified model. It is established that the modified model has an advantage when describing broad-band dielectric amorphous media. The optical band gap computed from the Forouhi–Bloomer and Lorentz models is compared with the value determined from the Tautz extrapolation.

Keywords:

thin films, fundamental absorption, dispersive model, magnetron sputtering

OCIS codes: 130.0250

References:

1. K. von Rottkay and M. Rubin, “Optical indexes of pyrolitic tin-oxide glass,” Mater. Res. Soc. Symp. Proc. 426, 449 (1996).
2. J. P. Cain, S. Robie, Q. Zhang, B. Sing, and I. Emami, “Combined use of X-ray reflectometry and ellipsometry for characterisation of thin-film optical properties,” Proc. SPIE 6155, 61550P (2006).
3. A. R. Forouhi and I. Bloomer, “Optical dispersion relation for amorphous semiconductors and amorphous dielectrics,” Phys. Rev. B 34, 7018 (1986).
4. A. R. Forouhi and I. Bloomer, “Calculation of optical constants n and k in the interband region,” in Handbook of Optical Constants of Solids II, E. D. Palic, ed. (Academic Press, New York, 1991), pp. 151–175.
5. L. Ding, T. P. Chen, Y. Liu, C. Y. Nig, and S. Fung, “Optical properties of silicon nanocrystals embedded in SiO2 matrix,” Phys. Rev. B 72, 125419 (2005).
6. V. V. Atuchin, V. N. Kruchinin, A. V. Kalinkin, V. Sh. Aliev, S. V. Rykhlitski˘ı, V. A. Shvets, and E. V. Spesivtsev, “Optical properties of the HfO(2−x)Nx and TiO(2−x)Nx films prepared by ion-beam sputtering,” Opt. Spektrosk. 106, 77 (2009). [Opt. Spectrosc. 106, 72 (2009)].
7. D. Davazoglou, M. A. Vasilopoulou, and P. Argitis, “Optical characterization of thin organic films by analyzing transmission measurements with the Forouhi–Bloomer model,” Microelec. Eng. 41/42, 619 (1998).
8. P. Cheyssac, N. Laidani, and M. Andere, “Optical absorption in ZrO2−x–C nanocomposite films on polymer substrates: application of an effective-medium theory,” Phys. Status Solidi C 10, 3376 (2008).
9. E. Lioudakis, A. Othonos, G. C. Hadjisavvas, P. C. Kelires, and A. G. Nassiopolou, “Quantum confinement and interface structure of Si nanocrystals of sizes 3–5 nm embedded in α-SiO2,” Physica E 38, 128 (2007).
10. A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, “Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin-film photovoltaics,” J. Appl. Phys. 92, 2424 (2002).
11. N. Kalfaginnis and S. Logothtis, “Color dependency on optical and electronic properties of TiNx thin film,” Rev. Adv. Mater. Sci. 15, 167 (2007).
12. F. Lai, L. Lin, R. Gai, Y. Lin, and Z. Huang, “Determination of optical constant and thicknesses of In2O3: Sn films from transmittance data,” Thin Solid Films 515, 7387 (2007).
13. O. D. Vol’pyan, P. P. Yakovlev, B. B. Meshkov, and O. A. Obod, “Optical properties of Ta2O5 films obtained by reactive magnetron sputtering,” Opt. Zh. 70, No. 9, 56 (2003). [J. Opt. Technol. 70, 669 (2003)].
14. O. D. Vol’pyan, O. A. Obod, and P. P. Yakovlev, “Investigation of SiO2 optical films produced by reactive ac magnetron sputtering,” Opt. Zh. 71, No. 7, 81 (2004). [J. Opt. Technol. 71, 487 (2004)].
15. O. D. Vol’pyan and A. I. Kuz’michev, “Magnetron deposition of optical coatings from variable-voltage, medium-frequency magnetrons,” Prikl. Fiz. No. 3, 34 (2008).
16. O. D. Vol’pyan and P. P. Yakovlev, “On the problem of calculating the optical film parameters from the measured transmission spectra,” Opt. Spektrosk. 92, 116 (2002). [Opt. Spectrosc. 92, 109 (2002)].
17. G. E. Jellison, F. A. Modin, P. Doshi, and A. Rohahgi, “Spectroscopic ellipsometry characterisation of thin-film silicon nitride,” Preprint of Oak Ridge National Laboratory, 1997, pp. 1–15.