Investigation of the influence of crystal perfection on the magnitude of stresses in (013)HgCdTe/CdTe/ZnTe/GaAs structures using second harmonic generation based on phase synchronism

Stupak, M.F., Dvoretskiy, S.A., Mikhaylov, N.N., Makarov, S.N., Elesin, A.G.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Ступак М.Ф., Дворецкий С.А., Михайлов Н.Н., Макаров С.Н., Елесин А.Г. Локальный контроль и измерение слабых напряжений на поверхности структур (013)HgCdTe/CdTe/ZnTe/GaAs с помощью генерации второй гармоники // Оптический журнал. 2024. Т. 91. № 2. С. 88–98. http://doi.org/10.17586/1023-5086-2024-91-02-88-98

Stupak M.F., Dvoretsky S.A., Mikhailov N.N., Makarov S.N., Elesin A.G. Local control and measurement of weak stresses on the surface of (013)HgCdTe/CdTe/ZnTe/GaAs structures using second harmonic generation [in Russian] // Opticheskii Zhurnal. 2024. V. 91. № 2. P. 88–98. http://doi.org/10.17586/1023-5086-2024-90-05-88-98

For citation (Journal of Optical Technology):

Mikhail F. Stupak, Sergey A. Dvoretsky, Nikolai N. Mikhailov, Sergey N. Makarov, and Ahdrei G. Elesin, "Investigation of the influence of crystal perfection on the magnitude of stresses in (013)HgCdTe/CdTe/ZnTe/GaAs structures using second harmonic generation based on phase matching," Journal of Optical Technology. 91(2), 112-117 (2024). https://doi.org/10.1364/JOT.91.000112

Abstract:

The subject of study is mechanical stresses in the surface layer of the HgCdTe/CdTe/ZnTe/GaAs structure. The aims of study are experimental testing of a new sensitive null reflection method for detection of weak local birefringence and identification by this method of the main characteristics of residual mechanical stresses in local regions of the near-surface graded wide gap HgCdTe layer in the (013)HgCdTe/CdTe/ZnTe/GaAs. Analysis of the influence of crystalline perfection on the magnitude of residual mechanical stresses. Method. Registration of the characteristics of the second harmonic signal of the laser IR radiation reflected from the surface of the rotating sample under study, passed through a nonlinear crystal, exposed to synchronism for the polarization perpendicular to the polarization of the laser radiation. Main results. The new null method based on the excitation of second harmonic generation in a nonlinear LiJO₃ crystal reflected from the surface of infrared laser radiation of a pulsed YAG:Nd laser with a wavelength of 1.064 µm has been developed. It is shown that such a sensitive method allows obtaining information on the anisotropy of the polarization of the reflected radiation due to residual deformation. The magnitude of the amplitude of the second harmonic signals maxima is obtained. Observations of fine structure in the maxima of the second harmonic signal indicate a complex structure of residual stresses associated with the presence of disoriented regions. Calculations of stresses in the near-surface region of the HgCdTe layer of composition x = 0.47, which amounted to (–20.5 ± 2) MPa, were carried out. The magnitude of the SHG signal for HgCdTe layers of higher crystalline perfection is about 1.5 times smaller than that for layers with reduced quality. Such stresses correspond to the value of the applied force of 2.3х10^–3 N. Practical significance. The results of the residual stresses investigation with the help of the developed null method will serve as a basis for measurements of the residual stresses in the local areas of surface layers of various complex multilayer structures both by area and thickness with layer-by-layer etching, which will make it possible to determine the influence of layer growth parameters in the process and after epitaxy on the arising stresses and to identify critical parameters of the technological process.

Keywords:

mechanical stresses, second harmonic, polarization, generation, HgCdTe structure

Acknowledgements:

the work was financially supported by a grant from the Ministry of Science and Higher Education № 075-15-2020-797(13.1902.21.0024). The authors would like to thank Burdina L.D. for chemical preparation of (013)GaAs substrates, Menshikov R.V. and Kartashov V.A. for pre-epitaxial preparation of the substrates and growth of ZnTe and CdTe buffer layers

OCIS codes: 160.6000, 190.2620, 190.4350

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