Characterization of the composition of InAsSbP epitaxial layers with optical spectroscopy

Kirilenko I.D., Dorogov M.V., Romanov V.V., Popova T.B., Moiseev K.D., Mynbaev, K.D., Chumanov I.V., Firsov D.D., Komkov O.S.

For Russian citation (Opticheskii Zhurnal):

Кириленко Я.Д., Дорогов М.В., Романов В.В., Попова Т.Б., Моисеев К.Д., Мынбаев К.Д., Чуманов И.В., Фирсов Д.Д., Комков О.С. Характеризация состава эпитаксиальных слоёв InAsSbP методами оптической спектроскопии // Оптический журнал. 2026. Т. 93. № 10. С. 3–11. http://doi.org/10.17586/1023-5086-2026-93-10-03-11

Kirilenko I.D., Dorogov M.V., Romanov V.V., Popova T.B., Moiseev K.D., Mynbaev K.D., Chumanov I.V., Firsov D.D., Komkov O.S. Characterization of the composition of InAsSbP epitaxial layers with optical spectroscopy [In Russian] // Opticheskii Zhurnal. 2026. V. 93. № 10. P. 3–11. http://doi.org/10.17586/1023-5086-2026-93-10-03-11

For citation (Journal of Optical Technology):

Abstract:

Scope of the research. Heterostructures with epitaxial layers of InAsSbP solid solutions grown by metal-organic vapor-phase epitaxy. The purpose of the study. Determination of the relationship between the elemental compositions of the crystallographic template and InAsSbP heteroepitaxial layers grown on these templates via optical methods. Methods. Integral reflectance spectroscopy in the ultraviolet and visible wavelength ranges; photoluminescence and photomodulation reflectance spectroscopy in the infrared range; X-ray spectral micro-analysis and energy-dispersive X-ray spectroscopy. Main results. Energy band diagram parameters of InAs1–x–ySbyPx quaternary solid solutions were determined via optical methods. The elemental composition of the solid solutions was verified using X-ray spectral micro-analysis and energy-dispersive X-ray spectroscopy. A relationship between the elemental compositions of the crystallographic template and the heteroepitaxial layers grown on the templates has been established. Practical significance. The established relationship between the elemental compositions of the crystallographic template and the epitaxial layers, combined with the determined energy band diagram parameters of the InAs1–x–ySbyPx system, provides a rationale for selecting growth regimes and compositions of wide-gap barrier layers to ensure effective carrier localization in the active region of mid-infrared LEDs and lasers.

Keywords:

InAsSbP, solid solutions, chemical composition, optical spectroscopy, X-ray spectroscopy

Acknowledgements:

the work at ITMO University was supported by the Ministry of Science and Higher Education of the Russian Federation, Project № FSER-2025-0005

OCIS codes: 120.5700, 130.5990, 250.5230, 260.3060, 300.6470

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