CdHgTe-based nanostructures for photodetectors

Дворецкий С.А., Квон З.Д., Михайлов Н.Н., Швец В.А., Виттман Б., Данилов С.Н., Ганичев С.Д., Асеев А.Л. Наноструктуры на основе CdHgTe для фотоприемников // Оптический журнал. 2009. Т. 76. № 12. С. 69–73.

Dvoretskiy S.A., Kvon Z.D., Mikhailov N.N., Shvets V.A., Wittmann B., Danilov S.N., Ganichev S.D., Aseev A.L. CdHgTe-based nanostructures for photodetectors [in Russian] // Opticheskii Zhurnal. 2009. V. 76. № 12. P. 69–73.

S. A. Dvoretskiĭ, Z. D. Kvon, N. N. Mikhaĭlov, V. A. Shvets, A. L. Aseev, B. Wittmann, S. N. Danilov, and S. D. Ganichev, "CdHgTe-based nanostructures for photodetectors," Journal of Optical Technology. 76 (12), 787-790 (2009). https://doi.org/10.1364/JOT.76.000787

This paper presents the results of growing quantum wells based on HgTe (HgTe/Cd0.735Hg0.265Te) 16.2 and 21nm thick on substrates of (013) CdTe/ZnTe/GaAs by molecular-beam epitaxy. The composition and thickness of the spacer and of the quantum well were monitored by an ellipsometric technique during growth. Galvanomagnetic studies in a wide range of magnetic fields (1-12T) at temperatures close to that of liquid helium (4.2K) showed that a two-dimensional electron gas is present in the nanostructures and that the levels are quantized. High mobilities were obtained for the two-dimensional electron gas: μe=2×105cm2/(V⋅sec) for an electron density of Ns=1.5×1011cm−2 and μe=5×105cm2/(V⋅sec) for Ns=3.5×1011cm−2. The circular and linear photogalvanic effects were studied in the quantum wells at room temperature in a wide wavelength interval: from the mid-IR (6-16μm) to the terahertz range (100-500μm).