Optical properties of HgCdTe epitaxial films doped with arsenic

Ruzhevich, M.S., Mynbaev, K.D., Firsov D.D., Komkov O.S., Varavin, V.S., Remesnik, V.G., Yakushev, M.V.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Ружевич М.С., Мынбаев К.Д., Фирсов Д.Д., Комков О.С., Варавин В.С., Ремесник В.Г., Якушев М.В. Оптические свойства эпитаксиальных пленок HgCdTe, легированных мышьяком // Оптический журнал. 2024. Т. 91. № 5. С. 33–42. http://doi.org/10.17586/1023-5086-2024-91-05-33-42

Ruzhevich M.S., Mynbaev K.D., Firsov D.D., Komkov O.S., Varavin V.S., Remesnik V.G., Yakushev M.V. Optical properties of HgCdTe epitaxial films doped with arsenic [in Russian] // Opticheskii Zhurnal. 2024. V. 91. № 5. P. 33–42. http://doi.org/10.17586/1023-5086-2024-91-05-33-42

For citation (Journal of Optical Technology):

Abstract:

Subject of study. Epitaxial films of Hg0.7Cd0.3Te solid solutions grown by molecular beam epitaxy and doped with arsenic to obtain hole-type conductivity in order to form p–n junctions for the manufacture of photodetecting structures in the infrared range. Aim of study. Determination of the types and characteristics of defects formed during arsenic doping of epitaxial films of Hg0.7Cd0.3Te solid solutions grown by molecular beam epitaxy, and establishing the effect of doping on the disorder of the solid solution. Main results. With regard to the volume and the surface of the films, the high quality of the as-grown material and its further improvement as a result of two-stage activation thermal annealing are shown. The fact of activation of arsenic with the formation of shallow (7–8 meV) acceptor levels as a result of annealing has been established. The absence of side defects with the introduction of arsenic into the films during the growth and during the annealing was recorded. Practical significance. The effectiveness of doping epitaxial films of Hg0.7Cd0.3Te solid solutions with arsenic as an acceptor impurity for creating layers with hole conductivity in the process of manufacturing of photodiode structures has been demonstrated.

Keywords:

cadmium-mercury tellurides, doping, photoluminescence, photoreflection

OCIS codes: 120.7000, 250.5230, 260.3060

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