УДК: 535.243

The optical properties of single-crystal silicon in the 3–5-µm region

Nesmelova, I.M., Astaf’ev, N.I., Kulakova, N.A.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Несмелова И.М., Астафьев Н.И., Кулакова Н.А. Оптические свойства монокристаллического кремния в области спектра 3–5 мкм // Оптический журнал. 2012. Т. 79. № 3. С. 87–90.

Nesmelova I. M., Astaf’ev N. I., Kulakova N. A. The optical properties of single-crystal silicon in the 3–5-µm region [in Russian] // Opticheskii Zhurnal. 2012. V. 79. № 3. P. 87–90.

For citation (Journal of Optical Technology):

I. M. Nesmelova, N. I. Astaf’ev, and N. A. Kulakova, "The optical properties of single-crystal silicon in the 3–5-µm region," Journal of Optical Technology. 79(3), 191-193 (2012). https://doi.org/10.1364/JOT.79.000191

Abstract:

This paper discusses features of radiation absorption in the spectral region from 3 to 5 µm by single-crystal silicon: the dependence of the absorption coefficient on resistivity in samples of n- and p-type conductivity, the additional absorption associated with intraband electron transitions in the conduction band, and the influence of short-wavelength illumination on the transmission spectra. Recommendations for the use of silicon as an optical medium are given from an analysis of the calculated and experimental data.

Keywords:

monocrystalline silicon, absorption coefficient, resistivity

OCIS codes: 160.1890

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