Opticheskii Zhurnal. 2024. V. 91. № 11.
Physical optics
Fedorov A.S., Eremkin E.V., Gerasimov V.S.
Calculation of charge transfer plasmons in one-dimensional and two-dimensional periodic systemsImage formation, processing and recognition
Medennikov, P.A., Pavlov, N.I.
A hierarchical list system for detecting and tracking point weakly emitting objects by image sequenceKasoev G.R.
Feature detector for space hyperspectral imagesCalculation, design and manufacture of optical systems
Greisukh, G.I., Levin, I.A., Ezhov, E.G.
Ultra-high-aperture dual-range gradient index-diffractive infrared objectiveGalaktionov I.V., Nikitin A.N., Sheldakova, Y.V., Toporovskiy, V.V., Abdulrazak S.H., Kudryashov, A.V.
Hartmannometer and Fizeau interferometer: Comparative analysis of the devices for optical surface testPhotonics, nanophotonics and radio photonics
Ilyushin P.Y., Shipilo D.E., Nikolaeva I.A., Panov N.A., Kosareva O.G.
Time-domain model of signal transformation in a semiconductor optical amplifier for bit error rate estimation along a communication lineQuantum optical technology
Erokhin K.Y., Kazantsev S.Y., Kazieva T.V., Mironov Y.B., Pchelkina N.V.
The applicability of quantum key distribut ion technology in a free atmosphere when constructing segments of modern quantum communication networksOptical material science and technology
Petrov M.P., Vezo O.S., Voitylov A.V., Vojtylov V.V., Trusov A.A.
Influence of the of the diamond particles surface layer on the their sols refractive indexBelyaev, V.V., Chausov, D.N., Solomatin, A.S., Kucherov R.N., Kumar S., Margaryan, H.L., Akopyan, N.G., Ermakova M.V., Belyaev, A.A., Hanna G.M., Vechkanov A.R., Andreev A.V.
Modeling of electron mobility in organic optoelectronics materialsSvinko V.O., Solovyeva E.V.
Preparation and optical properties of gold-polymer hybrids for bioimaging by surface-enhanced Raman scatteringLenshin A.S., Peshkov Y.А., Chernousova O.V., Kannykin S.V., Grechkina M.V., Minakov D.А., Zolotukhin D.S., Agapov B.L.
Influence of etching modes on the porosity of layers and photoluminescence of multilayer porous silicon