УДК: 535.417; 535.317; 778.38

The limiting possibilities of interference photolithography implemented in the visible region on thin films of glassy chalcogenide semiconductor

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Корешев С.Н., Ратушный В.П. Предельные возможности интерференционной фотолитографии, реализуемой в видимой области спектра на тонких слоях халькогенидного стеклообразного полупроводника // Оптический журнал. 2012. Т. 79. № 5. С. 40–47.

Koreshev S. N., Ratushnyĭ V. P. The limiting possibilities of interference photolithography implemented in the visible region on thin films of glassy chalcogenide semiconductor [in Russian] // Opticheskii Zhurnal. 2012. V. 79. № 5. P. 40–47.

For citation (Journal of Optical Technology):

S. N. Koreshev and V. P. Ratushnyĭ, "The limiting possibilities of interference photolithography implemented in the visible region on thin films of glassy chalcogenide semiconductor," Journal of Optical Technology. 79(5), 289-294 (2012).

Abstract:

This paper presents the results of investigating the parameters (minimum repetition period of the elements and porosity) of structures obtained under the action of argon laser radiation on thin films of glassy chalcogenide semiconductor deposited on layers of x-ray-amorphous chromium. It is shown that thin films of a three-component glassy semiconductor exposed by radiation with wavelength 0.488 µm can be used in the method of interference photolithography to obtain structures with a minimum period of 260 nm and a minimum size of the structural element of 65 nm. It is established that the minimum size of a structural element can be reduced to 50 nm when the repetition period of the elements is increased to 600 nm by using the “two-mask” technology of interference photolithography.

Keywords:

interference photolithography, thin films, glassy semiconductor

References:

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