УДК: 535.14535.015

Absorption of light by free electrons in semiconductors. I. Processes involving longitudinal optical phonons

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Осипова М.О., Перлин Е.Ю. Поглощение света свободными электронами в полупроводниках. I. Процессы с участием продольных оптических фононов // Оптический журнал. 2016. Т. 83. № 11. С. 3–7.

Osipova M.O., Perlin E.Yu. Absorption of light by free electrons in semiconductors. I. Processes involving longitudinal optical phonons [in Russian] // Opticheskii Zhurnal. 2016. V. 83. № 11. P. 3–7.

For citation (Journal of Optical Technology):

M. O. Osipova and E. Yu. Perlin, "Absorption of light by free electrons in semiconductors. I. Processes involving longitudinal optical phonons," Journal of Optical Technology. 83(11), 648-651 (2016). https://doi.org/10.1364/JOT.83.000648

Abstract:

We calculated the absorption coefficient of light in intraband transitions involving longitudinal optical phonons in semiconductors for various arbitrary free electron densities. We describe the intraband absorption coefficients as a function of frequency and temperature for a crystal with the band structure and vibration mode parameters typical of A₂B₆ crystals.

Keywords:

absorption coefficient, intraband optical transitions, longitudinal optical phonons, Frohlich Hamiltonian

Acknowledgements:

This work was performed as part of the design component of a government scientific research task order—project nos. 3.1675.2014/K and 3.821.2014/K.

OCIS codes: 190.0190, 320.0320, 160.6000

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