УДК: 621.383.49:621.793.162

Photoresistors of the 2–15 μm spectral range based on CdxHg1−xTe heteroepitaxial structures obtained by molecular-beam epitaxy

Filatov, A.V., Susov, E.V., Kuznetsov, N.S., Karpov, V.V.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Филатов А.В., Сусов Е.В., Кузнецов Н.С., Карпов В.В. Фоторезисторы спектрального диапазона 2-15 мкм на основе гетероэпитаксиальных структур CdxHg1–xTe, полученных методом молекулярно-лучевой эпитаксии // Оптический журнал. 2016. Т. 83. № 9. С. 43–50.

Filatov A.V., Susov E.V., Kuznetsov N.S., Karpov V.V. Photoresistors of the 2–15 μm spectral range based on CdxHg1−xTe heteroepitaxial structures obtained by molecular-beam epitaxy [in Russian] // Opticheskii Zhurnal. 2016. V. 83. № 9. P. 43–50.

For citation (Journal of Optical Technology):

A. V. Filatov, E. V. Susov, N. S. Kuznetsov, and V. V. Karpov, "Photoresistors of the 2–15 μm spectral range based on Cd_xHg_1−xTe heteroepitaxial structures obtained by molecular-beam epitaxy," Journal of Optical Technology. 83(9), 543-548 (2016). https://doi.org/10.1364/JOT.83.000543

Abstract:

This paper presents the results of the development and commercial production of photoresistors from Cd_xHg_1−xTe heteroepitaxial structures obtained by molecular epitaxy for IR engineering on the 2–15 μm spectral range. Various photoresistor designs with cooling to 80 and 230 K are presented, along with their main photoelectric parameters. The reliability of the photoresistors in terms of the gamma-percentage time to failure is calculated.

Keywords:

CdxHg1−xTe heteroepitaxial structures, photoresistor, reliability

Acknowledgements:

The authors express their appreciation to IFP SO RAN staff members Yu. G. Sidorov, S. A. Dvoretskiı˘, N. N. Mikhaı˘lov, and V. S. Varavin for creating and investigating epitaxial structures for the photoresistors.

OCIS codes: 230.5160, 040.3060,160.6840

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