The influence of grid guard diodes with a floating n-region potential on the spatial resolution of n-on-p linear HgCdTe photodetectors

Vasiliev, V.V., Vishnyakov A.V., Sabinina, I.V., Sidorov, G.Y., Stuchinskiy, V.A.

For Russian citation (Opticheskii Zhurnal):

Васильев В.В., Вишняков А.В., Сабинина И.В., Сидоров Г.Ю., Стучинский В.А. Влияние охранных сеточных диодов с плавающим потенциалом n-области на пространственное разрешение n-на-p линейных HgCdTe-фотоприёмников // Оптический журнал. 2024. Т. 91. № 2. С. 67–75. http://doi.org/10.17586/1023-5086-2024-91-02-67-75

Vasiliev V.V., Vishnyakov A.V., Sabinina I.V., Sidorov G.Yu., Stuchinsky V.A. The influence of grid guard diodes with a floating n-region potential on the spatial resolution of n-on-p linear HgCdTe photodetectors [In Russian] // Opticheskii Zhurnal. 2024. V. 91. № 2. P. 67–75. http://doi.org/10.17586/1023-5086-2024-91-02-67-75

For citation (Journal of Optical Technology):

Abstract:

Subject of study. Spatial resolution of n-on-p linear focal-plane-array detectors based on mercury-cadmium-tellurium material and modified via introducing a grid guard diode with a floating n-region potential into their structure. The aims of study are: to establish the influence of the grid guard diode with the floating n-region potential on the line spread function and modulation transfer function of the linear n-on-p photodetectors; to study the possibility of using structural defects in the photodetectors under the study for implementing a continuous action of the guard diode as a sink for photogenerated charge carriers. Method. The diffusion of photogenerated charge carriers in the absorber layer of focal-plane-array detectors was modeled using the Monte Carlo method, and the experimental study of the spatial resolution of such photodetectors was performed using spot-scan measurements followed by the calculation of the modulation transfer function of photodetector structures. Main results. It is shown that the presence of the grid diode with the floating n-region potential in the structure of n-on-p photodetector leads to broadening of the base and to decrease of the width of the upper part of the line-spread-function peak of linear focal plane arrays with the corresponding modification of their modulation transfer function; however, on the whole no significant improvement in the resolution of the modified photodetector structure was achieved. Practical significance. The results of the present study indicate the need to ground the guard diodes in the studied photodetectors. These results can also be used in the development of methods for optimizing/enhancing the spatial resolution of focal-plane-array detectors.

Keywords:

guard diode, linear photodetector, mercury-cadmium-tellurium material, charge carriers, injection, line spread function, modulation transfer function

OCIS codes: 040.1240, 040.3060, 040.5160, 040.6070, 130.5990, 350.5730

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