Structural modification of glassy chalcogenide semiconductors under the action of femtosecond laser radiation

Лесик М.А., Аверина А.В., Шимко А.А., Маньшина А.А. Модификация структуры халькогенидных стеклообразных полупроводников под воздействием фемтосекундного лазерного излучения // Оптический журнал. 2009. Т. 76. № 1. С. 57–60.

Lesik M.A., Averina A.V., Shimko A.A., Manshina A.A. Structural modification of glassy chalcogenide semiconductors under the action of femtosecond laser radiation [in Russian] // Opticheskii Zhurnal. 2009. V. 76. № 1. P. 57–60.

M. A. Lesik, A. V. Averina, A. A. Shimko, and A. A. Man’shina, "Structural modification of glassy chalcogenide semiconductors under the action of femtosecond laser radiation," Journal of Optical Technology. 76 (1), 48-50 (2009). https://doi.org/10.1364/JOT.76.000048

This paper discusses the structural changes induced by laser radiation with wavelength λ=800nm, pulse width τ=100fs, and repetition rate f=80MHz in bulk samples of glassy semiconductors. As a result of this work, waveguide structures were created in As2S3 and 0.15(Ga2S3)-0.85(GeS2):Er3+[C(Er3+)=1.2at%] glasses under various conditions of laser action (the recording method, the speed and number of scans). The structural changes induced by femtosecond laser radiation in a sample of As2S3 glass were investigated by Raman scattering.