How the parasitic-nanostructuring parameters of relief-phase holographic structures on thin glassy-chalcogenide-semiconductor films depend on their relief height

Корешев С.Н., Ратушный В.П. Зависимость параметров паразитного наноструктурирования рельефно-фазовых голограммных структур на тонких пленках халькогенидного стеклообразного полупроводника от высоты их рельефа // Оптический журнал. 2009. Т. 76. № 5. С. 47–50.

Koreshev S.N., Ratushniy V.P. How the parasitic-nanostructuring parameters of relief-phase holographic structures on thin glassy-chalcogenide-semiconductor films depend on their relief height [in Russian] // Opticheskii Zhurnal. 2009. V. 76. № 5. P. 47–50.

S. N. Koreshev and V. P. Ratushnyĭ, "How the parasitic-nanostructuring parameters of relief-phase holographic structures on thin glassy-chalcogenide-semiconductor films depend on their relief height," Journal of Optical Technology. 76 (5), 286-288 (2009). https://doi.org/10.1364/JOT.76.000286

This paper presents the results of an experimental study of how the relief height of reflective relief-phase holograms obtained on layers of glassy chalcogenide semiconductor (GCS) affects the parasitic-nanostructuring parameters of their surface. The work is carried out by means of the Solver P-47 scanning probe microscope. The short-wavelength limit within which reflective relief-phase holograms obtained on thick GCS layers can be used, established with no a posteriori processing, equals 80nm. Starting from that value, holograms whose relief height is optimized to maximize the diffraction efficiency satisfy the Maréchal criteria σ⩽λ/27 in terms of their rms surface-roughness parameter σ and possess allowable light scattering σ⩽λ/100 and thereby provide the light-scattering level and aberrations allowable for precision optical systems in the image reconstructed by these holograms.