Dynamics of the pulsed picosecond laser ablation of silicon targets

Алехин А.И., Перминов П.А., Заботнов С.В., Головань Л.А., Кашкаров П.К. Динамика пикосекундной импульсной лазерной абляции кремниевых мишеней // Оптический журнал. 2011. Т. 78. № 3. С. 10–13.

Alekhin A.I., Perminov P.A., Zabotnov S.V., Golovan L.A., Kashkarov P.K. Dynamics of the pulsed picosecond laser ablation of silicon targets [in Russian] // Opticheskii Zhurnal. 2011. V. 78. № 3. P. 10–13.

A. I. Alekhin, P. A. Perminov, P. K. Kashkarov, S. V. Zabotnov, and L. A. Golovan’, "Dynamics of the pulsed picosecond laser ablation of silicon targets,"  Journal of Optical Technology. 78(3), 161-163 (2011). https://doi.org/10.1364/JOT.78.000161

This paper discusses the dynamics of nanoparticle formation during the pulsed picosecond laser ablation of samples of crystalline and porous silicon by means of elastic light scattering. Experimental measurements are presented of how the signal produced by scattering at the ablation products depends on the distance between the probe radiation and the target surface. The differences of these dependences for crystalline and porous silicon wafers are discussed. It was found that the scattering kinetics of the probe radiation on the ablation products has two characteristic peaks at times of about several microseconds and several tens of microseconds, respectively.

The research was suppored by RFBR (projects Nos. 08-09-90024 and № 09-02-00888. The measurements were made in the Shared Research Facility of Physics department of M.V. Lomonosov Moscow State University.