Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer for ultraviolet devices

Бессолов В.Н., Жиляев Ю.В., Коненкова Е.В., Сорокин Л.М., Феоктистов Н.А., Шарофидинов Ш, Щеглов М.П., Кукушкин С.А., Метс Л.И., Осипов А.В. Нитриды алюминия и галлия на кремниевой подложке с промежуточным нанослоем карбида кремния для приборов ультрафиолетового диапазона излучения // Оптический журнал. 2011. Т. 78. № 7. С. 23–28.

Bessolov V.N., Ghilyaev Yu.V., Konenkova E.V., Sorokin L.M., Feoktistov N.A., Sharofidinov Sh., Shcheglov M.P., Kukushkin S.A., Mets L.I., Osipov A.V. Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer for ultraviolet devices [in Russian] // Opticheskii Zhurnal. 2011. V. 78. № 7. P. 23–28.

V. N. Bessolov, S. A. Kukushkin, L. I. Mets, Yu. V. Zhilyaev, E. V. Konenkova, A. V. Osipov, L. M. Sorokin, N. A. Feoktistov, Sh. Sharofidinov, and M. P. Shcheglov, "Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer for ultraviolet devices," Journal of Optical Technology. 78(7), 435-439 (2011). https://doi.org/10.1364/JOT.78.000435

This paper presents the idea of a new technological method of growing low-defect heterostructures of aluminum and gallium nitrides on a silicon substrate for the UV region. It is experimentally proven for the first time that creating an intermediate silicon carbide nanolayer makes it possible to use vapor-phase epitaxy to obtain high-quality layers of aluminum and gallium nitrides on a silicon substrate with no cracks. The main characteristics of the crystal perfection of these layers – namely, the half-width of the X-ray rocking curves and the half-width of the photoluminescence spectra – taking into account the absence of cracks, significantly excel the values obtained by other authors in this case. It is shown that an exciton band with a maximum emission energy of 3.45 eV and a half-width of 63 meV appears in the photoluminescence spectra of gallium nitride at a temperature of 77 K.

The research was supported by RFBR (grants Nos. 10-03-00433-а, 09-03-00596-а, 11-02-00496 and 11-02-12154-офи_м) and programs of the presidium of RAS: No. 27 "Basic research principle of nanotechnologies and nanomaterials", "Innovations and development support".