УДК: 535.241.13, 534

Interaction effects of exciton-polaritons propagating in superlattices with a sound wave

Ayukhanov, R.A., Gulyaev, Y.V., Shkerdin, G.N.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Аюханов Р.А., Гуляев Ю.В., Шкердин Г.Н. Эффекты взаимодействия экситон-поляритонов, распространяющихся в сверхрешетках, со звуковой волной // Оптический журнал. 2013. Т. 80. № 2. С. 12–14.

Ayukhanov R.A., Gulyaev Yu.V., Shkerdin G.N. Interaction effects of exciton-polaritons propagating in superlattices with a sound wave [in Russian] // Opticheskii Zhurnal. 2013. V. 80. № 2. P. 12–14.

For citation (Journal of Optical Technology):

R. A. Ayukhanov, Yu. V. Gulyaev, and G. N. Shkerdin, "Interaction effects of exciton-polaritons propagating in superlattices with a sound wave," Journal of Optical Technology. 80(2), 77-79 (2013). https://doi.org/10.1364/JOT.80.000077

Abstract:

An expression is obtained for the oscillator strength of the main exciton transition, computed using a variational procedure in the approximation of an infinitely deep quantum well. It is shown that this quantity is a factor of (aB/λ)2 greater than the oscillator strength in the bulk case (aB is the Bohr radius of the bulk exciton, and λ is the variational parameter), and this increases the polariton gap. The modulation effect by a sound wave of the reflectance of light at the longitudinal-exciton frequency in superlattices is considered, along with the diffraction of light at the sound wave. It is shown that these effects can be achieved in superlattices at temperatures one and a half times as great as for bulk crystals and with weaker requirements on their frequency.

Keywords:

exciton, polariton, superlattice, quantum well, oscillator strength, exciton-polariton gap, reflectance, diffraction, permittivity

OCIS codes: 230.0230,230.1040

References:

1. R. A. Ayukhanov, Yu. V. Gulyaev, and G. N. Shkerdin, “Features of acoustooptic interaction in the region of exciton resonance,” Fiz. Tekh. Poluprovodn. 20, 1933 (1986) [Semiconductors 20, 1214 (1986)].
2. D. S. Chemla, “Quasi-two-dimensional excitons in GaAs=AlxGa 1−xAs semiconductor multiple quantum well structures,” Helv. Phys. Acta 56, 607 (1983).
3. R. A. Ayukhanov, Yu. V. Gulyaev, and G. N. Shkerdin, “Linear coefficients of photoelasticity in layered structures with quantum wells close to resonances of quasi-two-dimensional excitons, taking into account the finiteness of the width of the well,” Fiz. Tverd. Tela 35, 1916 (1993) [Phys. Solid State 35, 957 (1993)].
4. R. A. Ayukhanov and G. N. Shkerdin, “Linear coefficients of photoelasticity in multilayer quantum well structures having a sloping bottom in exciton resonance regions,” Fiz. Tverd. Tela 40, 1740 (1998) [Phys. Solid State 40, 1582 (1998)].
5. S. A. Moskalenko, Introduction to the Theory of High-Density Excitons (Shtiintsa, Kishinev, 1983).
6. Yu. V. Gulyaev and G. N. Shkerdin, “On diffraction theory of electromagnetic waves at sound in semiconductors,” Radiotekh. Elektron. 19, 1075 (1974).