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УДК: 537.533.3
How plasma preprocessing affects the luminescence properties of porous silicon
Full text «Opticheskii Zhurnal»
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Publication in Journal of Optical Technology
Галкин Н.Г., Ян Д.Т., Чусовитин Е.А., Расин А.Б., Галкин К.Н., Боженко М.В., Мараров В.В., Асташинский В.М., Кузьмицкий А.М. Влияние предварительной плазменной обработки на люминесцентные свойства пористого кремния // Оптический журнал. 2014. Т. 81. № 8. С. 14–18.
Galkin N.G., Yan D.T., Chusovitin E.A., Rasin A.B., Galkin K.N., Bozhenko M.V., Mararov V.V., Astashinskiy V.M., Kuzmitskiy A.M. How plasma preprocessing affects the luminescence properties of porous silicon [in Russian] // Opticheskii Zhurnal. 2014. V. 81. № 8. P. 14–18.
N. G. Galkin, E. A. Chusovitin, A. B. Rasin, K. N. Galkin, M. V. Bozhenko, V. V. Mararov, D. T. Yan, V. M. Astashinskiĭ, and A. M. Kuz’mitskiĭ, "How plasma preprocessing affects the luminescence properties of porous silicon," Journal of Optical Technology. 81(8), 431-434 (2014). https://doi.org/10.1364/JOT.81.000431
Measurements have been made of the radiative properties of porous silicon obtained by anodic etching of plasma-processed p-type single-crystal silicon (100). It is found that the photoluminescence intensity of the test samples is significantly greater than that of porous silicon obtained on the surface of single-crystal silicon with no plasma preprocessing.
porous silicon, plasma preprocessing, photoluminescence
OCIS codes: 250.0250
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