УДК: 541.15

The synthesis, x-ray diffraction, and optical properties of the CdS–ZnTe semiconductor system

Karpova, E.O., Nagibina, I.Y., Makarova, A.S.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Карпова Е.О., Нагибина И.Ю., Макарова А.С. Синтез, рентгенографические и оптические свойства полупроводниковой системы CdS-ZnTe // Оптический журнал. 2015. Т. 82. № 6. С. 77–82.

Karpova E.O., Nagibina I.Yu., Makarova A.S. The synthesis, x-ray diffraction, and optical properties of the CdS–ZnTe semiconductor system [in Russian] // Opticheskii Zhurnal. 2015. V. 82. № 6. P. 77–82.

For citation (Journal of Optical Technology):

E. O. Karpova, I. Yu. Nagibina, and A. S. Makarova, "The synthesis, x-ray diffraction, and optical properties of the CdS–ZnTe semiconductor system," Journal of Optical Technology. 82(6), 388-392 (2015). https://doi.org/10.1364/JOT.82.000388

Abstract:

Solid solutions of (CdS)_x (ZnTe)_1−x (x=0.1, 0.25, 0.5, 0.75, 0.9) have been synthesized by the isothermal-diffusion method and have been certified using x-ray-diffraction analysis. The optical properties of the solid solutions and binary components of the CdS–ZnTe system have been investigated. The method of IR spectroscopy has been used to establish the chemical surface composition of the semiconductors under investigation and to confirm the formation of substitutional solid solutions. The band gaps of the semiconductors under investigation have been calculated by obtaining spectra in the UV region. Raman scattering made it possible to establish the frequencies of greatest luminescence and the emission maximum and to confirm the identity of the resulting solid solutions.

Keywords:

synthesis, semiconductors, x-ray diffraction, optical properties, spectroscopy, chemical surface composition, luminescence

OCIS codes: 260.0260

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