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ISSN: 1023-5086


ISSN: 1023-5086

Scientific and technical

Opticheskii Zhurnal

A full-text English translation of the journal is published by Optica Publishing Group under the title “Journal of Optical Technology”

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DOI: 10.17586/1023-5086-2023-90-04-35-47

УДК: 538.975

Modification of optical and electrical properties of lead selenide PbSe films by nanosecond laser pulses with a wavelength of 1.064 microns

For Russian citation (Opticheskii Zhurnal):

Ольхова А.А., Патрикеева А.А., Дубкова М.А., Сергеев М.М. Модификация оптических и электрических свойств плёнок селенида свинца PbSe наносекундными импульсами лазерного излучения с длиной волны 1,064 мкм // Оптический журнал. 2023. Т. 90. С. 35—47.


Olkhova A.A., Patrikeeva A.A., Dubkova M.A., Sergeev M.M. Modification of optical and electrical properties of lead selenide PbSe films by nanosecond laser pulses with a wavelength of 1.064 microns // Opticheskii Zhurnal. 2023. V. 90. № 4. P. 35–47. http: //

For citation (Journal of Optical Technology):

The subject of the study. The paper presents the results of a study on the change in the optical and electrical characteristics of PbSe films exposed to nanosecond laser pulses. Objective. Investigation of the features of the modification of the structure and properties of lead selenide (PbSe) films up to 1 µm thick deposited on coverslip plates after exposure to nanosecond laser pulses with a wavelength of 1064 nm in the mode of line­by­line scanning of the radiation spot. Main results. The change in the optical properties of the films depended on the intensity of the laser radiation. At power densities less than 1,45 kW/cm2, irradiation led to a significant decrease in the reflection of the PbSe film in the visible spectral range, while the film remained opaque and its resistance increased by more than 2 times. At high power densities, there was a gradual increase in transmission and a slight decrease in the reflection of the PbSe film in the visible spectral range. Practical significance. It is shown that the use of near infrared laser pulses makes it possible to correct the optical and electrical characteristics of chalcogenide films. PbSe films are widely used as photosensitive elements in gas analysis devices, where high radiation absorption is important, as well as low electrical resistance. Exposure of films to laser radiation makes it possible to achieve the desired characteristics, replacing heat treatment in an oven in the technological process.


Acknowledgment: the presented research was carried out at the expense of a grant from the Russian Science Foundation (Project № 19­79­10208).


chalcogenide films, laser action, surface structuring, nanosecond laser pulses, photosensitivity, film resistivity

OCIS codes: 140.3390.

  1. Sati D.C., Jain H. Coexistence of photodarkening and photobleaching in Ge­Sb­Se thin films // Journal of Non­Crystalline Solids. 2017. V. 478. P. 23–28.
  2. Tran D., Gorius N., Quilligan G. et al. Gas analyzer for monitoring H2O and CO2 partial pressures in space instrumentation // IEEE Sensors Journal. 2022. V. 22. № 13. P. 12576–12587.
  3. Maskaeva L.N., Yurk V.M., Markov V.F. et al. Structure and photoelectric properties of PbSe films deposited in the presence of ascorbic acid // Semiconductors. 2020. V. 54. P. 1191–1197.
  4. Weng B., Qiu J., Zhao L., Yuan Z., Chang C., Shi Z. Recent development on the uncooled mid­infrared PbSe detectors with high detectivity // Quantum Sens. Nanophoton. Devices XI. 2014. V. 8993. P. 178–185.
  5. Bakanov V.M., Maskaeva L.N., Markov V.F. Thermosensitization of nanostructured PbSe films // Chimica Techno Acta. 2015. V. 2. № 2. P. 164–170.
  6. Hemati T., Weng B. Theoretical study of leaky­mode resonant gratings for improving the absorption efficiency of the uncooled mid­infrared photodetectors // Journal of Applied Physics. 2018. V. 124. № 5. P. 053105.
  7. Yang Y., Liu, H.C., Hao, M.R., Shen W.Z. Investigation on the limit of weak infrared photodetection // Journal of Applied Physics. 2011. V. 110. № 7. P. 074501.
  8. Nepomnyaschy S.V., Pogodina S.B. Method for manufacturing a semiconductor structure on the basis of lead selenide // Patent WO2013/154462 A2. 2013.
  9. Nian Q., Callahan M., Saei M., Look D., Efstathiadis H., Bailey J., Cheng G. J. Large scale laser crystallization of solution­based Alumina­doped Zinc Oxide (AZO) nanoinks for highly transparent conductive electrode // Sci Rep. 2015. V. 5. P. 15517.
  10. Olkhova A.A., Patrikeeva A.A., Dubkova M.A., Kuzmenko N.K., Nikonorov N.V., Sergeev M.M. Comparison of CW NUV and Pulse NIR laser influence on PbSe films photosensitivity // Applied Sciences. 2023. V. 13. № 4. P. 2396.
  11. Veiko V.P. Laser processing of film elements. L.: Mashinostroenie, 1986. T. 248. P. 4.
  12. Popov V.P., Tikhonov P.A., Tomaev V.V. Investigation into the mechanism of oxidation on the surface of lead selenide semiconductor structures // Glass physics and chemistry. 2003. V. 29. P. 494–500.
  13. Ahmed R., Gupta M.C. Mid­infrared photoresponse of electrodeposited PbSe thin films by laser processing and sensitization // Optics and Lasers in Engineering. 2020. V. 134. P. 106299.
  14. Tomaev V.V., Miroshkin V.P.,  Gar'kin L.N., Tikhonov P. Dielectric properties and phase transition in the PbSe+ PbSeO3 composite material // Glass Physics and Chemistry. 2005. V. 31. P. 812–819.
  15. Tomaev V.V., Petrov Yu.V. Preparation of oxidized PbSeO3 films from PbSe films // Glass Physics and Chemistry. 2012. V. 38. № 2. P. 276–281.
  16. Silverman S.J., Levinstein H. Electrical properties of single crystals and thin films of PbSe and PbTe // Physical Review. 1954. V. 94. № 4. P. 871.